2019
DOI: 10.1021/acsanm.9b00608
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Large Metallic Vanadium Disulfide Ultrathin Flakes for Spintronic Circuits and Quantum Computing Devices

Abstract: Atmospheric pressure chemical vapor deposition (APCVD) is employed for the synthesis of layered vanadium disulfide. By tuning several critical growth parameters, we achieve VS 2 flakes with lateral dimension over 100 μm and thickness down to monolayer (∼0.59 nm) and bilayer (∼1.17 nm), which are larger and thinner than those previously reported in the literature. Furthermore, ultrathin flakes with thicknesses of several atomic layers are directly synthesized on mica and SiO 2 substrates without the use of an e… Show more

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Cited by 18 publications
(19 citation statements)
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“…We can clearly identify two main diffraction peaks corresponding to (001) and (011) from VS 2 crystals as shown in Figure c, which agrees with the one reported in the literature of VS 2 nanosheets synthesized by using the CVD method. , Specifically, the (001) peak at 2θ = 15.52° corresponds to a d -spacing of ∼5.703 Å. This is within 1.0% of the theoretical d (001)-spacing of 5.755 Å, , indicating that the possible presence of interstitial V atoms within the van der Waals gap introduced negligible distortion in the 1T-phase atomic structure of VS 2 Figure d presents the Raman spectrum of VS 2 nanosheets prepared on SiO 2 /Si substrate.…”
Section: Resultssupporting
confidence: 88%
“…We can clearly identify two main diffraction peaks corresponding to (001) and (011) from VS 2 crystals as shown in Figure c, which agrees with the one reported in the literature of VS 2 nanosheets synthesized by using the CVD method. , Specifically, the (001) peak at 2θ = 15.52° corresponds to a d -spacing of ∼5.703 Å. This is within 1.0% of the theoretical d (001)-spacing of 5.755 Å, , indicating that the possible presence of interstitial V atoms within the van der Waals gap introduced negligible distortion in the 1T-phase atomic structure of VS 2 Figure d presents the Raman spectrum of VS 2 nanosheets prepared on SiO 2 /Si substrate.…”
Section: Resultssupporting
confidence: 88%
“…[ 21,22 ] Also, the 2D GVTMCs become extremely sensitive to the surrounding stimulations, such as light, [ 127 ] gases, [ 39 ] biomolecules, [ 37 ] and chemical agents, [ 38 ] thus enabling the development of a variety of sensors with high specificity. Noteworthily, the ferromagnetism in 2D VS 2 , [ 23,152 ] VSe 2 , [ 24–27,69 ] and Ta 3 FeS 6 [ 46,102 ] has been demonstrated, making GVTMCs as the particularly attractive 2D magnetic materials for van der Waals spintronic applications.…”
Section: Conclusion and Prospectsmentioning
confidence: 99%
“…f) Summary of the figure of merit and roadmap of 2D magnetoresistive devices (detailed data are tabulated in Table S6, Supporting Information); the number denotes the references of earlier reported 2D materials. [ 1,19,37–48 ]…”
Section: Figurementioning
confidence: 99%