Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>0.67</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>0.33</mml:mn></mml:mrow></

Long, Yu; Li, X. W.; Gong, G. Q.; Xiao, Gang; Gupta, AK; Lecoeur, Ph.; Sun, J. Z.; Wang, Y. Y.; Dravid, Vinayak P.

doi:10.1103/physrevb.54.r8357

Cited by 417 publications

(188 citation statements)

References 15 publications

(4 reference statements)

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“…The LSMO films belong to the class of half-metallic materials. In general, the magnetic oxide materials of the perovskites type La 3+ 1−x A 2+ x MnO 3 , where A is a divalent alkaline metal (Sr, Ca, Ba, Pb), have been studied extensively due to their potential application in the field of spintronics [6], having a possible application as FM electrodes in MTJ devices [7]. The best magnetic properties in the LSMO system are reported for the La 0.67 Sr 0.33 MnO 3 compound (T C ∼ 370 K).…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Magnetic Thin Films

Mantovan¹,

Georgieva²,

Perego³

et al. 2007

Acta Phys. Pol. A

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We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic layer deposition. Our strategy follows two main schemes. The first is a hybrid process where the ferromagnetic layers are produced by chemical vapour deposition and the tunnel oxide is deposited by atomic layer deposition. As ferromagnetic electrodes we use Co and Fe3O4, while MgO, Al2O3, and HfO2 are employed as tunnel oxides. The second and most intriguing scheme is a full-oxide approach in which the ferromagnetic layers and the tunnel barrier layer are all oxides grown by atomic layer deposition. As ferromagnetic layers we focused on the growth of complex manganites (La 0.7 Sr 0.3 MnO 3 ) while as a tunnel oxide we propose La2O3. Film composition has been studied with time of flight secondary ion mass spectroscopy and Rutherford backscattering spectrometry. X-ray diffraction, X-ray reflectivity, and Fourier transform infrared spectroscopy have been used to investigate the structure and morphology of the layers. The magnetic properties of the films are measured by superconducting quantum interference device magnetometer.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Magnetic Thin Films

Mantovan¹,

Georgieva²,

Perego³

et al. 2007

Acta Phys. Pol. A

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“…Non-linear current-voltage characteristics have been observed in CMR-barrier-CMR junctions Sun et al, 1997;Lu et al, 1996). These currentvoltage (IV ) characteristics appear roughly consistent with a metal-barrier-metal tunneling process.…”

Section: J Z Sunmentioning

confidence: 51%

“…Successful demonstration of large low-field magnetoresistance in CMR-based devices was first realized in such junctions Lu et al, 1996). The devices are lithographically fabricated from La 0.67 (Ca,Sr) 0.33 MnO 3 -SrTiO 3 -La 0.67 (Ca,Sr) 0.33 MnO 3 (LSMO -STO -LSMO, or LCMO -STO -LCMO) trilayer epitaxial thin films.…”

Section: Introductionmentioning

confidence: 99%

Thin–film trilayer manganate junctions

1998

Philosophical Transactions of the Royal Society of London. Seri

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Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La 0.67 Sr 0.33 MnO 3 -SrTiO 3 -La 0.67 Sr 0.33 MnO 3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

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“…For spintronic applications, it would be advantageous to incorporate half metal oxides (e.g La x Sr 1-x MnO 3 ) [4,5] onto graphene for efficient spin injection measurements [6][7][8]. Furthermore, for electronic devices, high-κ dielectrics or ferroelectric oxides could allow for ultrahigh doping in graphene and improve the performance of graphene field effect transistors [9][10][11][12].…”

mentioning

confidence: 99%

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Ahmed

Wen

Ohta

et al. 2016

Journal of Crystal Growth

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We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å.Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO 3 grown atop a SrO/HOPG stack.

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Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxialLa0.67Sr0.33

Cited by 417 publications

References 15 publications

Atomic Layer Deposition of Magnetic Thin Films

Atomic Layer Deposition of Magnetic Thin Films

Thin–film trilayer manganate junctions

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

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