Large magnetoresistance in non-magnetic silver chalcogenides

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

“…The transport measurements reported by Xu. et al [1] Xu et al [1] found a large, positive MR in Ag 21d Se and Ag 21d Te with a linear dependence on applied magnetic ®eld. Usually, a quadratic dependence on the ®led is expected, i.e.…”

“…However, because of the low symmetry of the crystal structures involved (orthorhombic and monoclinic) a sizable orbital quenching persists even at G and the in¯uence of spin± orbital interaction can be expected to be strongly reduced as compared with cubic systems with comparable composition. The measurements were performed with samples of d in the range of 0.01±0.33 [1], far outside the homogeneity region of the phases (d , 10 23 [3]). Subsequent work by Ogorelec et al [30] did show a quadratic dependence on the magnetic ®eld, but substantially reduced scale as compared with that by Xu et al [1].…”

“…The measurements were performed with samples of d in the range of 0.01±0.33 [1], far outside the homogeneity region of the phases (d , 10 23 [3]). Subsequent work by Ogorelec et al [30] did show a quadratic dependence on the magnetic ®eld, but substantially reduced scale as compared with that by Xu et al [1]. The composition of the samples was not speci®ed in Ref.…”

“…Recently, an unusually large and positive magnetoresistance (MR) was reported [1] for the low-temperature (b) phases of Ag 2 Se and Ag 2 Te, and for thin ®lms of Ag 2 Te [2]. These compounds are non-magnetic.…”

Oriented attachment of nanoparticles to form micrometer-sized nanosheets/nanobelts by topotactic reaction on rigid/flexible substrates with improved electronic properties

“…It is well known that nonstoichiometric Ag 2 ± δ Te has a potential magnetoresistance (MR) property due to its highly disordered stoichiometry. 40,41 From Figures 7a and b, the Hall voltage sensitivity, ΔV H (T, H)/V H (T, 0), Oriented attachment of nanoparticles H Qian et al of the obtained film to magnetic field H is enhanced up to 188% at room temperature, demonstrating a potential Hall effect sensor application. 42 The Hall resistance varies linearly with the magnetic flux density with a correlation coefficient R of 0.99989.…”