Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

Zhou, Yongkang; Choi, Seongim; Emura, S.; Hasegawa, Shigehiko; Asahi, H.

doi:10.1063/1.2841657

Cited by 46 publications

(34 citation statements)

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“…11 Nearly all recent reports about Gd-doped GaN show a strong ferromagnetic signal at room temperature. [8][9][10][12][13][14] Only few exceptions show partly ferromagnetic samples or no ferromagnetism. 15,16 The origin of the ferromagnetic order in GaN:Gd is still unknown.…”

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confidence: 99%

Tracking defect-induced ferromagnetism in GaN:Gd

et al. 2011

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We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10 19 cm −3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.

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confidence: 99%

Tracking defect-induced ferromagnetism in GaN:Gd

et al. 2011

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“…XAFS data indicated that most of Gd atoms occupy the Ga-sites in GaGdN. It was also found that the Si-doping into GaGdN enhances the saturation magnetization (M s ) [2,5]. GaGdN/GaN SL …”

Section: Resultsmentioning

confidence: 95%

“…1 Introduction Evidence is found that the ferromagnetism of GaGdN epilayers has been retained and might be improved with the addition of Si [1,2]. Our recent results also show that the incorporation of extra shallow donors into the InGaGdN epilayers through Si-doping could also improve the magnetic properties as compared to the undoped InGaGdN epilayers.…”

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confidence: 88%

Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Tawil

Krishnamurthy

Kakimi

et al. 2010

Phys. Status Solidi (c)

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We report the investigation on the effects of Si‐doping in the GaN barrier layers of InGaGdN/GaN multiple‐quantum wells (MQWs) prepared by the molecular‐beam epitaxy. X‐ray diffraction results exhibit improved crystal and interfacial qualities for the Si‐doped barrier samples as compared to the undoped barrier sample. The magnetic properties measured with the superconducting quantum interference device magnetometer indicate clear hysteresis and enhanced saturation magnetization with the increase of Si cell temperature for all the Si‐doped barrier MQW samples. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…So far some research groups have discussed possible vacancies at Ga or nitrogen sites in GaN:Gd [6][7][8][9]. The very recent publication has confirmed the nitrogen vacancy in InGaN, and found that its energy level is located at ∼ 7 meV below the conduction band of InGaN by means of a thermal admittance spectroscopy [10].…”

Section: Introductionmentioning

confidence: 93%

Multiple Scattering Approach to GaN:Gd Gd <i>L</i><sub>3</sub>-Edge XANES

Koide

Fujikawa

Abe

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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We found that GaN:Gd known as one of the diluted magnetic semiconductors has two types of the thin-layer single crystal (Type-1 and Type-2) under different growth conditions. These crystals show different XRD profiles and X-ray absorption near edge structure at the Gd L3-edge. We measure Gd L3-edge XANES spectra and apply multiple scattering calculations to obtain the information of the local stereo structure around the Gd ion in GaN:Gd. In the Type-1 crystal, the calculations suggest that dopant Gd ions are substitued with Ga ions, and the Gd-N bond length is longer than the Ga-N length in GaN crystal. On the other hand, Type-2 crystal has at least one nitrogen vacancy adjacent to the substituted Gd ion, and furthermore the nitrogen vacancy is not in the c-axis around the Gd ion.

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Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

Abstract: Articles you may be interested inOptical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition Appl. Phys. Lett. 91, 054106 (2007);

Cited by 46 publications

References 10 publications

Tracking defect-induced ferromagnetism in GaN:Gd

Tracking defect-induced ferromagnetism in GaN:Gd

Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Multiple Scattering Approach to GaN:Gd Gd <i>L</i><sub>3</sub>-Edge XANES

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