Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Tawil, Siti Nooraya Mohd; Krishnamurthy, Daivasigamani; Kakimi, Rina; Ishimaru, Manabu; Emura, S.; Hasegawa, Shigehiko; Asahi, H.

doi:10.1002/pssc.201000484

Cited by 7 publications

(4 citation statements)

References 5 publications

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“…This is because they can significantly improve the conductivity, luminosity, and magnetic properties, with the long lifetime of excited state and multiple valence electrons. Reports are also available on co-doping using different metals including Ag [ 13 ], Ga [ 14 ], Al [ 15 ], and Si [ 16 ], with benefits for enhancing the electrical conductivity and widening the transmittance spectrum of DMS materials. However, a controlled manner of utilizing the aforementioned dopants should be established, because they could cause more carriers to scatter inside the lattice, which would lower the device performance.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

et al. 2023

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Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor n of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes.

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Section: Introductionmentioning

confidence: 99%

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

et al. 2023

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“…Tawil et al grew InGaN:Gd layers using PA-MBE on GaN (0001) templates. 33,34 Growth at 400°C produced an In content up to 28% and 35% and C Gd levels ∼1 at. %.…”

Section: Magnetic Properties Of Iii-n:rementioning

confidence: 99%

Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

Hite¹,

Zavada²

2019

ECS J. Solid State Sci. Technol.

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This paper focuses on the magnetic properties of wide bandgap III-N semiconductors doped with rare earth elements. Such materials form a novel class of dilute magnetic semiconductors that have an important potential impact on future information processing devices. In particular, rare earth doped III-N thin films may lead to integration of electronic, optical, and magnetic functionality for computation, sensing, and communication applications. The main aspects of this paper concern the efficient incorporation of rare earth ions in III-N thin films and the demonstration of magnetic effects at room temperature. While early studies were based on ion implantation and solid-state diffusion, major advances have been achieved through molecular beam epitaxy and metal-organic chemical vapor deposition. Measurements of room temperature magnetic effects from III-N films doped with rare earth elements, including erbium, gadolinium, europium, neodymium, and thulium, are presented. The dependence of measured magnetic properties on the synthesis method, co-doping, and material defects are addressed.

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“…Currently, co-doped ZnO with double dopant has attracted the researcher's interest to induce strong ferromagnetism in ZnO [4]. Incorporation of shallow donors such as Aluminum (Al), Gallium (Ga) Indium (In) into ZnO-based DMSs is figured to improves the structural, optical, and electrical properties of the thin films as well enhancing their ferromagnetic properties [5] [6]. Considering their lower and smaller ionic radius (0.54 Å) to ZnO (0.74 Å) makes Al as a good co-dopant element for easily incorporated into host zinc sites.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Structural and Electrical Properties of ZnO Thin Films Co-Doped with Rare Earth Gd and Al Prepared by Co-Sputtering Method

Raship

Tawil

Nayan

et al. 2022

MSF

Self Cite

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Undoped ZnO, Gd-doped ZnO, and (Al, Gd) co-doped ZnO thin films were synthesized using the co-sputtering technique on a glass substrate. XRD data confirmed all the films are hexagonal structures with dominant (002) diffraction peaks. There are no secondary phases or other peaks detected except for ZnO which proves well incorporation of Gd3+ and Al3+ ions into ZnO ions for Gd and (Al, Gd) co-doping ZnO thin films. The EDX analysis shows the composition of Al, Gd, Zn, and O for (Al, Gd) co-doped ZnO thin films considering the successfully doping of Gd and Al into ZnO structure by this deposition method. As compared with undoped ZnO and Gd-doped ZnO, the electrical properties of (Al, Gd) co-doped ZnO showing a good enhancement of carrier concentration (2.34 x 1026 m-3) and electrical conductivity (1.41 x 105 Ωm-1) whereas the resistivity is low about 7.11 x 104 Ωcm.

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Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Cited by 7 publications

References 5 publications

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

Investigation on the Structural and Electrical Properties of ZnO Thin Films Co-Doped with Rare Earth Gd and Al Prepared by Co-Sputtering Method

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