2017
DOI: 10.1016/j.jmmm.2016.09.130
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Large magnetization and high Curie temperature in highly disordered nanoscale Fe2CrAl thin films

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Cited by 15 publications
(6 citation statements)
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“…These peaks are also not existed if samples have A2-type disordered structure. Subsequently, the Al atom in the periodic table belongs to a different period than that of Co or Fe, so our samples exhibited an A2 type disordered phase [7].…”
Section: X-ray Diffraction (Xrd)mentioning
confidence: 96%
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“…These peaks are also not existed if samples have A2-type disordered structure. Subsequently, the Al atom in the periodic table belongs to a different period than that of Co or Fe, so our samples exhibited an A2 type disordered phase [7].…”
Section: X-ray Diffraction (Xrd)mentioning
confidence: 96%
“…The strong exchange interaction is basically due to the Co-Co exchange interactions. As in fully-disordered CFA lattice, the Co atom will have Fe or Al as its nearest neighbor which can lead Co-Al-Co exchange interaction [7]. According to Slater-Pauling (SP) rule, the theoretical bulk saturationmagnetization value for CFA is 5.0 µB/f.u.…”
Section: Effects Of Particle Size On Magnetic Propertiesmentioning
confidence: 99%
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“…This effect can be minimized if the local field of individual flux quanta (Equation (1)) largely exceeds the coercive field of the ferromagnetic layer. In order to reduce the coercivity, thinner ferromagnetic layers could be used [82,83], at the expense of reducing the Curie temperature [84]. Furthermore, optimization of the parameters for imprinting nearly isothermal and stable states, such as the superconducting critical state, imposes different constraints than those needed for imprinting magnetic flux avalanches in superconductors which can substantially heat the material locally and propagate at speeds exceeding those of magnetic domains [85].…”
Section: Discussionmentioning
confidence: 99%
“…Co 2 TiGe (CTG) thin films were grown using molecular beam epitaxy deposition. The base pressure inside the chamber was below 9 × 10 −10 Torr and less than 5 × 10 −9 Torr during the film deposition 49,50 . Polished silicon (100) substrates were used for the film deposition.…”
Section: Sample Preparationmentioning
confidence: 99%