Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

Wang, Wenhong; Du, Yang; Xu, Guizhou; Zhang, Xiaoming; Liu, Enke; Liu, Zhongyuan; Shi, Youguo; Chen, Jinglan; Wu, Guangheng; Zhang, Xixiang

doi:10.1038/srep02181

Cited by 99 publications

(64 citation statements)

References 33 publications

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“…The expression (17) for the sample resistance shows a rich variety of parameter regimes illustrated in Figs. 4 -6.…”

Section: Phase Diagrammentioning

confidence: 99%

“…Large positive (and often linear) MR was reported in graphene and topological insulators close to charge neutrality [14][15][16][17][18][19][20][21][22] [36][37][38][39] that this effect could be a direct condensed matter manifestation of the Adler-Bell-Jackiw chiral anomaly [40][41][42] . However, the unexpected variety of materials exhibiting negative MR [8][9][10][11][31][32][33][34][35] does not support the idea that such measurements may provide a "smoking gun" for detecting a Weyl semimetal 37,39 .…”

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confidence: 99%

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Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

et al. 2018

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Ultra-pure conductors may exhibit hydrodynamic transport where the collective motion of charge carriers resembles the flow of a viscous fluid. In a confined geometry (e.g., in ultra-high quality nanostructures) the electronic fluid assumes a Poiseuille-like flow. Applying an external magnetic field tends to diminish viscous effects leading to large negative magnetoresistance. In two-component systems near charge neutrality the hydrodynamic flow of charge carriers is strongly affected by the mutual friction between the two constituents. At low fields, the magnetoresistance is negative, however at high fields the interplay between electron-hole scattering, recombination, and viscosity results in a dramatic change of the flow profile: the magnetoresistance changes its sign and eventually becomes linear in very high fields. This novel non-monotonic magnetoresistance can be used as a fingerprint to detect viscous flow in two-component conducting systems.The independent particle approximation 1,2 has dominated the solid state physics for nearly a century. While clearly successful in describing most of the basic transport phenomena in metals and semiconductors, this approach completely neglects Coulomb interaction between charge carriers (the latter is frequently said to be justified by the "weakness" of electron-electron interaction due to, e.g., screening or statistical effects). To be more specific, in many conventional conductors the typical interaction length scale, ee , is too long in comparison to other relevant scales in the system. In particular, at low temperatures the dominant scattering process is due to potential disorder and hence the shortest length scale is the mean free path, dis ee , which determines the residual Drude resistivity at T = 0. At high temperatures, the electron-phonon interaction dominates, ph ee . If these two temperature regimes overlap, then indeed (at least, away from any phase transitions) the role of electron-electron interaction is reduced to small corrections. However, if there exists a temperature window where ee dis , ph , then in that case the independent particle approximation is violated: the motion of charge carriers becomes collective (or hydrodynamic) and hence transport properties of the system are determined by interaction 3 .Signatures of the hydrodynamic behavior have been observed in recent experiments in graphene 4-6 and palladium cobaltate 7 . The effect of external magnetic field on electronic transport in systems with ee dis , ph was studied in magnetotransport measurements in ultra-highmobility GaAs quantum wells 8-10 and more recently in the Weyl semimetal WP 2 11 reporting, in both cases, large negative magnetoresistance. A detailed account of the history of magnetotransport measurements is beyond the scope of this paper. Here we only stress the following well known facts: at the single-particle level, there is no classical magnetoresistance (MR) in single-band (or one-component) systems; taking into account more than one band of carriers (e.g., in semiconduct...

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“…The expression (17) for the sample resistance shows a rich variety of parameter regimes illustrated in Figs. 4 -6.…”

Section: Phase Diagrammentioning

confidence: 99%

mentioning

confidence: 99%

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

et al. 2018

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“…Certain specific features of excitation spectra and models of disorder may also lead to linear MR [25,[31][32][33][34][35]. Experimentally, linear MR has been observed in a wide variety of 2D and 3D materials [1][2][3][4][5][6][7][8][9][11][12][13][14][15][16][17][18][36][37][38][39][40][41][42] and in a broad range of magnetic fields, suggesting that a more general mechanism is behind the observed behavior.…”

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confidence: 99%

“…An increasing number of these studies report observations of large linear magnetoresistance (MR), which often shows no sign of saturation in classically strong magnetic fields even at room temperatures [1][2][3][4][5][6][7][8].…”

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confidence: 99%

Magnetoresistance in Two-Component Systems

et al. 2015

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Two-component systems with equal concentrations of electrons and holes exhibit nonsaturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality due to recombination. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at strong enough magnetic fields, the boundary region dominates over the bulk leading to linear magnetoresistance. Our results are relevant for two-and three-dimensional semimetals and narrow band semiconductors including most of the topological insulators.

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“…1 While this effect has been forgotten for a long time, its (re-)discovery in silver chalcogenides 2 attracted a lot of interest due to possible applications in magnetosensor devices. 3 Since then, linear magnetoresistance (LMR) has been reported in numerous materials such as InAs films, 4 YPdBi Heusler topological insulators, 5 InSb, 6 silicon, 7,8 epitaxial graphene, 9 Ba(FeAs) 2 , 10 Bi 2 Se 3 , 11,12 and Bi 2 Se 3 /Bi 2 Te 3 heterostructure. 13 The origin of LMR in these materials is subject of often controversial discussions.…”

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confidence: 99%