Metal
dichalcogenide semiconductors have shown tremendous performance
in various optoelectronic applications due to their excellent properties.
However, low carrier mobility associated with the photoactive materials
restricts its applications in highly responsive and ultrafast photodetectors.
Here, to improve the device performance, SnSe2 has been
incorporated with reduced graphene oxide (RGO) to form a SnSe2–RGO bulk heterojunction. SnSe2–RGO
solution has been drop cast on a pulsed laser deposited MoS2 film to fabricate SnSe2–RGO/MoS2 hybrid
structure. The built-in electric potential generated at the SnSe2–RGO/MoS2 interface facilitates the self-powered
photodetection. Under IR illumination, the device exhibits excellent
photoresponse with a responsivity of 13.75 A W–1 and a detectivity of 5.08 × 1012 Jones at 0 V. The
excellent performance of the device is attributed to high charge carrier
mobility of RGO and a robust built-in electric field at the interface.
Also, the device shows excellent photoresponse under visible light
illumination.