Large Band Gap Opening between Graphene Dirac Cones Induced by Na Adsorption onto an Ir Superlattice

Papagno, M.; Rusponi, Stefano; Sheverdyaeva, P. M.; Vlaic, Sergio; Etzkorn, Markus; Pacilé, D.; Moras, Paolo; Carbone, C.; Brune, Harald

doi:10.1021/nn203841q

Cited by 80 publications

(110 citation statements)

References 56 publications

(118 reference statements)

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“…The formation of graphene is evidenced by the electronic states π and σ. In contrast to the conical shape of the π bands dispersing linearly towards the Fermi level 4,7,31,32 displayed by weakly interacting graphene, for graphene/Re(0001) we observe a parabolic dispersion of the π band with a maximum at the K point 3.90 eV below E F . Similar to graphene/Ru(0001) 13,15,33 , the hybridization with the metal d states modifies the π * state of graphene into a diffuse band (indicated by the arrow).…”

Section: Methodscontrasting

confidence: 90%

Hybridization of graphene and a Ag monolayer supported on Re(0001)

et al. 2013

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We have investigated the electronic structure of graphene supported on Re(0001) before and after the intercalation of one monolayer of Ag by means of angle-resolved photoemission spectroscopy measurements and density functional theory calculations. The intercalation of Ag reduces the graphene-Re interaction and modifies the electronic band structure of graphene. Although the linear dispersion of the π state of graphene in proximity of the Fermi level highlights a rather weak graphene-noble metal layer interaction, we still observe a significant hybridization between the Ag bands and the π state in lower energy regions. These results demonstrate that covering a surface with a noble metal layer does decouple the electronic states, but still leads to a noticeable change in the electronic structure of graphene.

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Section: Methodscontrasting

confidence: 90%

Hybridization of graphene and a Ag monolayer supported on Re(0001)

et al. 2013

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“…These gaps can be tuned with an external E-field perpendicular to the plane, which breaks the inversion symmetry (IS) of the system due to the presence of buckling in the honeycomb structure 19 . In this way, silicene can overcome difficulties associated with graphene in electronics applications (lack of a controllable gap) 20,21 , potential applications of graphene in nano-electronics due to the available spin, valley and pseudo-spin degrees of freedom notwithstanding [22][23][24][25][26][27] .…”

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confidence: 99%

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

et al. 2013

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Silicene is a one-atom-thick two-dimensional crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene, because it should, in principle, generate both a band gap and polarized spin-states that can be controlled with a perpendicular electric field. Here we use first-principles calculations to show that field-gated silicene possesses two gapped Dirac cones exhibiting nearly 100% spin-polarization, situated at the corners of the Brillouin zone. Using this fact, we propose a design for a silicene-based spin-filter that should enable the spin-polarization of an output current to be switched electrically, without switching external magnetic fields. Our quantum transport calculations indicate that the proposed designs will be highly efficient (nearly 100% spin-polarization) and robust against weak disorder and edge imperfections. We also propose a Y-shaped spin/valley separator that produces spin-polarized current at two output terminals with opposite spins.

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“…chirality and quantum Hall phase shift) in typical doping regimes, as we will discuss elsewhere [27]. By comparison, typical gaps in simple epitaxial graphene systems (for example [26] graphene on BN) are also small (30-50 meV), whereas gaps in the 0.1 eV range require complex patterning techniques [28].…”

Section: Discussionmentioning

confidence: 99%

Vibrational stability of graphene under combined shear and axial strains

Cocco

Fiorentini

2015

Phys. Rev. B

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We study the vibrational properties of graphene under combined shear and uniaxial tensile strain using density-functional perturbation theory. Shear strain always causes rippling instabilities with strain-dependent direction and wavelength; armchair strain contrasts this instability, enabling graphene stability in large range of combined strains. A complementary description based on membrane elasticity theory nicely clarifies the competition of shear-induced instability and uniaxial tension. We also report the large strain-induced shifts of the split components of the G optical phonon line, which may serve as a shear diagnostic. As to the electronic properties, we find that conical intersections move away from the Brillouin zone border under strain, and tend to coalesce at large strains, making the opening of gaps difficult to assess. By a detailed search, we find that even at large strains only small gaps in the tens-of-meV range open at the former Dirac points.

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Large Band Gap Opening between Graphene Dirac Cones Induced by Na Adsorption onto an Ir Superlattice

Cited by 80 publications

References 56 publications

Hybridization of graphene and a Ag monolayer supported on Re(0001)

Hybridization of graphene and a Ag monolayer supported on Re(0001)

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

Vibrational stability of graphene under combined shear and axial strains

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