2015
DOI: 10.1103/physrevb.92.045411
|View full text |Cite
|
Sign up to set email alerts
|

Vibrational stability of graphene under combined shear and axial strains

Abstract: We study the vibrational properties of graphene under combined shear and uniaxial tensile strain using density-functional perturbation theory. Shear strain always causes rippling instabilities with strain-dependent direction and wavelength; armchair strain contrasts this instability, enabling graphene stability in large range of combined strains. A complementary description based on membrane elasticity theory nicely clarifies the competition of shear-induced instability and uniaxial tension. We also report the… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
3
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
3
1

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 28 publications
0
3
0
Order By: Relevance
“…In comparison, the stability of armchair graphene nanoribbons is improved with the increase of ribbon width under the shear strain [13]. Last but not least, the shear strain causes the rippling instability with strain-dependent direction and wavelength, and the large strain-induced shifts of the split components of the G optical phonon line, which may serve as a shear diagnosis [14].…”
Section: Introductionmentioning
confidence: 99%
“…In comparison, the stability of armchair graphene nanoribbons is improved with the increase of ribbon width under the shear strain [13]. Last but not least, the shear strain causes the rippling instability with strain-dependent direction and wavelength, and the large strain-induced shifts of the split components of the G optical phonon line, which may serve as a shear diagnosis [14].…”
Section: Introductionmentioning
confidence: 99%
“…From the practical viewpoint, our suggestion is easy to countercheck and exploit. Gaps from 20 meV upwards can be produced by strain [11], epitaxy [12], nanostructuration [13]. Doping would be in the typical currentlyreachable range.…”
mentioning
confidence: 99%
“…So far we have implicitly assumed that the perturbation opening the gap has the periodicity of graphene itself (which is the case, for example, for combined sheartension strains preserving vibrational stability [11]). This consideration is relevant in view of a recent report of quantum Hall effect measurements [16] for graphene on h-BN, which suggest that the system has a gap of order 20 meV and no n=0 Landau level-that is, the Berry phase would be essentially zero.…”
mentioning
confidence: 99%