Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Schramm, Andreas; Tommila, J.; Strelow, Christian; Hakkarainen, Teemu; Tukiainen, Antti; Dumitrescu, M.; Mews, Alf; Kipp, Tobias; Guina, Mircea

doi:10.1088/0957-4484/23/17/175701

Cited by 26 publications

(27 citation statements)

References 31 publications

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“…Even though encouragingly bright and spectrally pure emission from lithographically defined QDs in an etched in a GaAs quantum well has been reported on recently 27, the most promising approaches to realize structures with high optical quality rely on growth on pre‐patterned substrates 28–32. These substrates are typically patterned either by a mask with holes exposing the surface, and position controlled QDs are realized by means of selective area growth 26, 33, 34, or the surfaces are structured directly via lithography and etching techniques 32, 35–37. Unfortunately, the optical properties of the QDs can suffer from their close proximity to the re‐growth surface 28, 38, which is usually manifested in spectrally broadened single QD‐related emission features.…”

Section: Introductionmentioning

confidence: 99%

In(Ga)As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality

Schneider

Huggenberger

Gschrey

et al. 2012

Physica Status Solidi (a)

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In this article, we describe epitaxial growth and investigations of optical properties of In(Ga)As/GaAs site-controlled quantum dots (QDs) fabricated on (001)-oriented GaAs substrates. The QD nucleation is directed by pre-patterning planar GaAs surfaces with shallow nanoholes. The focus of this work lies on the realization of arrays of site-controlled QDs (SCQDs) with a tailored morphology and optical properties comparable to QDs fabricated on planar substrates. By maximizing the migration length during QD deposition, we were able to increase the QD pitches to values exceeding device dimensions of typical semiconductor microresonators. The introduction of a seeding layer in our growth scheme allows us to extend the vertical distance between the QDs and the etched nucleation centres to about 20 nm without suffering from nanoholes being occupied by multiple QDs. Furthermore, the extended distance between the QD layer and the re-growth interface allows us to preserve excellent optical properties of the single QDs as probed in photoluminescence with an average single QD related linewidth of 133 meV and minimum values as low as 25 meV for non-resonant excitation. The high yield of optically active QDs on the pre-defined nucleation positions is studied by cathodoluminescence (CL) with high spatial resolution. We find emission from single SCQDs on more than 90% of the nucleation centres, which is a pre-requisite for any scalable QD-device fabrication scheme.

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Section: Introductionmentioning

confidence: 99%

In(Ga)As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality

Schneider

Huggenberger

Gschrey

et al. 2012

Physica Status Solidi (a)

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“…For example, nanoholes patterned on a flat (001) substrate surface define preferential QD nucleation positions, associated with surface chemical potential minima, at the bottom of each nanohole. Different lithographic techniques have been demonstrated for the fabrication of patterned substrates, including e‐beam lithography, nanoimprint lithography, focused ion beam (FIB) patterning, and atomic force microscopy (AFM) oxidation lithography . Typical results of patterned InAs dots using e‐beam lithography are shown in Figure a–d.…”

Section: Advanced Epitaxial Growth Technology For Novel Single Qdsmentioning

confidence: 99%

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Zhao

Chen

et al. 2019

Adv Quantum Tech

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Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on‐demand generation of single‐photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. This review is focused on the latest significant progress of QD photonic devices. First, advanced technologies in QD growth are discussed, with special attention to droplet epitaxy and site‐controlled QDs. Then, the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques is overviewed. The discussion is extended to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light‐emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.

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“…In molecular beam epitaxy (MBE) processes, this can be achieved by defining the nucleation sites for impinging atoms using patterning the surface. Patterning is usually accomplished by lithographic techniques, such e-beam lithography [7][8][9][10][11], nanoimprint lithography [12], interference lithography, photolithography [13], or atomic force microscopy (AFM) lithography [14].…”

Section: Introductionmentioning

confidence: 99%

The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains

Schramm¹,

Hakkarainen²,

Tommila³

et al. 2016

Nano Online

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Structural and optical properties of InAs quantum dot (QD) chains formed in etched GaAs grooves having different periods from 200 to 2000 nm in [010] orientation are reported. The site-controlled QDs were fabricated by molecular beam epitaxy on soft UV-nanoimprint lithography-patterned GaAs(001) surfaces. Increasing the groove periods decreases the overall QD density but increases the QD size and the linear density along the groove direction. The effect of the increased QD size with larger periods is reflected in ensemble photoluminescence measurements as redshift of the QD emission. Furthermore, we demonstrate the photoluminescence emission from single QD chains.

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Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Cited by 26 publications

References 31 publications

In(Ga)As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality

In(Ga)As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains

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