In(Ga)As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality

Schneider, Christian; Huggenberger, A.; Gschrey, Manuel; Gold, Peter Werner; Rodt, Sven; Forchel, A.; Reitzenstein, Stephan; Höfling, Sven; Kamp, M.

doi:10.1002/pssa.201228373

Cited by 23 publications

(23 citation statements)

References 53 publications

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“…In this regard, the linewidth has been found to strongly depend on the proximity to heterointerfaces and free surfaces, due to the effect of fluctuating charge states in the environment and resulting spectral wandering of emisison lines . For optimized growth conditions and advanced sample designs, record linewidth values as low as 7 μeV were reported for randomly occupied QD sites and around 20 μeV were demonstrated for QD patterns with only one QD at each site ( p ‐shell excitation, see Section ). In this regard, site‐controlled QDs are comparable to self‐assembled QDs in terms of emission linewidths.…”

Section: Semiconductor Quantum Dotsmentioning

confidence: 99%

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

Dietrich

Fiore

Thompson

et al. 2016

Laser & Photonics Reviews

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214

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The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different material platforms being investigated, direct-bandgap semiconductors and particularly gallium arsenide (GaAs) offer the widest range of functionalities, including single-and entangled-photon generation by radiative recombination, low-loss routing, electro-optic modulation and single-photon detection. This paper reviews the recent progress in the development of the key building blocks for GaAs quantum photonics and the perspectives for their full integration in a fully-functional and densely integrated quantum photonic circuit.

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Section: Semiconductor Quantum Dotsmentioning

confidence: 99%

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

Dietrich

Fiore

Thompson

et al. 2016

Laser & Photonics Reviews

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210

214

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“…1,3 Initial reports on single QD and ensemble QD properties of such QDs have outlined the problems affiliated by this technique, namely a severe single-QD linewidth broadening by defect induced spectral diffusion 3,4 and a decreasing internal quantum efficiency by nonradiative relaxation processes. 5 Careful process and sample growth optimization 6 have led to strongly improved emission characteristics of both the single [7][8][9] and the ensemble QD properties 9, 10 with almost comparable properties to self-assembled high quality GaInAs QDs. This has led to recent applications of such positioned QDs in cavity quantum electrodynamics experiments, 6 and even the demonstration of indistinguishable photons from QDs comprising some long range ordering.…”

mentioning

confidence: 99%

“…The growth-and fabrication recipe is described in detail in Ref. 7. Shallow nanoholes were defined into epitaxially grown GaAs buffer layers by means of electron beam (E-beam) lithography and wet-chemical etching.…”

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confidence: 99%

“…The close-by lines are attributed to multi-excitonic and charged complexes from the same QD or from emission from neighboring SCQDs which are simultaneously excited. As discussed in 7 we excluded the occurrence of the emission from interstitial QDs by highly spatially resolved scanning techniques. By increasing the sample temperature, both QDs show a redshift of their emission line, caused by the shrinking of the material bandgap.…”

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confidence: 99%

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Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

Braun¹,

Schneider²,

Maier³

et al. 2014

AIP Advances

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In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

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“…However, fabrication of devices that contain dots at defined positions is not possible, since the placement of the resonators is determined by the (random) location of the quantum dots. This can be circumvented by the use of site-controlled quantum dots [8]. In this case, a patterned surface directs the nucleation of the dots at specific positions.…”

mentioning

confidence: 99%

Fabrication of quantum dot and cavity nanostructures

Kamp

2015

2015 17th International Conference on Transparent Optical Networks (ICTON)

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EXTENDED ABSTRACTIn this tutorial, I'll discuss fabrication aspects of cavities that contain quantum dots as active emitters. As far as the quantum dots are concerned, the most established fabrication technique is self-assembled Stranski-Krastanov growth [1]. This mechanism relies on the supply of a material with a lattice constant larger than that of the substrate, and quantum dots will form spontaneously after a certain planar layer thickness is exceeded. While self-assembled quantum dot growth has been reported for a number of material systems, the InGaAs/GaAs material combination remains the workhorse for QD cavity structures due to the excellent optical quality of the dots and the mature technology that is available for the GaAs material system.Optical confinement in resonators is achieved by total internal reflection at the semiconductor -air interface, the formation of an optical bandgap in structures that feature a periodic modulation of the refractive index, or a combination of both mechanisms. The different available resonator types [2] (photonic crystal [3], whispering gallery mode [4], micropillar [5]) have their pros and cons with respect to the ratio of the quality factor and the mode volume, the coupling efficiency to in-plane and out-of-plane modes, and the possibility to tune the resonance. A major issue in the fabrication of quantum dot -cavity structures is the spectral and spatial resonance of the dot with the cavity. The commonly used approach defines several hundred or thousand structures on a chip, followed by a screening process that identifies good devices. This technique is perfectly suitable for the fabrication of single structures, and several breakthrough experiments in the field have been performed using devices made this way. However, fabrication of devices that rely on several coupled QDresonators is not possible.Several techniques have been reported to address this issue. One possibility is to locate the quantum dots before the fabrication of the cavities using e.g. photoluminescence. The position of the dot with respect to reference markers on the sample can then be used to define the resonator by electron beam lithography of the resonator pattern after aligning to the very same markers [6]. Alternatively, a second laser beam that is collinear with the PL-excitation laser can be used to expose a layer of photoresist on the sample. This technique has even been used to define coupled resonators with modes that match the emission of the exciton and biexciton [7]. The advantage of this 'fabrication of the cavity around the quantum dot' approach is that no compromise has to be made with respect to the epitaxy of the dots. However, fabrication of devices that contain dots at defined positions is not possible, since the placement of the resonators is determined by the (random) location of the quantum dots. This can be circumvented by the use of site-controlled quantum dots [8]. In this case, a patterned surface directs the nucleation of the dots at specific positions. However, the dots ...

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In(Ga)As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality

Cited by 23 publications

References 53 publications

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

Fabrication of quantum dot and cavity nanostructures

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