Large area ZnO films optimized for graded band-gap Cu(InGa)Se2-based thin-film mini-modules

Cooray, Nawalage F.; Kushiya, Katsumi; Fujimaki, Atsushi; Sugiyama, I.; Miura, T.; Okumura, Dai; Satô, Masao; Ooshita, Mineo; Yamase, Osamu

doi:10.1016/s0927-0248(97)00055-x

Cited by 41 publications

(17 citation statements)

References 2 publications

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“…The chemical bath process is well known as a deposition process for polycrystalline or amorphous thin films [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The method requires the presence of reagents that act as a source of chalcogen ions and complexion of the metal ion of interest.…”

Section: Chemical Bath Depositionmentioning

confidence: 99%

“…The window layers used in these high-performance solar cells are usually composed of two materials: a CdS buffer layer (Eg = 2.42 eV) and a transparent conductive oxide (TCO) top layer such as ZnO and In 2 O 3 [1][2][3][4][5]. An attractive topic in the R&D activities on chalcopyritebased absorbers is to fabricate a Cd-free device structure [6][7][8][9][10][11][12]. The motivation for searching for an alternative for the standard CdS buffer layer is not only to eliminate the toxic cadmium but also to improve the light transmission in the blue wavelength by using materials with a wider bandgap compared to CdS.…”

Section: Introductionmentioning

confidence: 99%

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Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells

Ennaoui¹

2000

Can. J. Phys.

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The highest efficiency for Cu(Ga,In)Se 2 (CIGS) thin-film-based solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as the chemical bath deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, we describe the basic concepts involved in the CBD technique. The recipes developed in our laboratory for the heterogeneous deposition of good-quality thin films of ZnO, ZnSe, and MnS are presented. In view of device optimization, the initial formation of chemical-bathdeposited ZnSe thin films on Cu(Ga,In)(S,Se) 2 (CIGSS) and the subsequent development of the ZnSe/CIGSS heterojunctions were investigated by X-ray photoelectron spectroscopy (XPS). The good surface coverage was controlled by measuring changes in the valence-band electronic structure as well as changes in the In4d, Zn3d core lines. From these measurements, the growth rate was found to be around 3.6 nm/min. The valence band and the conduction band-offsets E V and E C between the layers were determined to be 0.60 and 1.27 eV, respectively for the CIGSS/ZnSe interface. The energy-band diagram is discussed in connection with the band-offsets detemined from XPS data. A ZnSe thickness below 10 nm has been found to be optimum for achieving a homogeneous and compact buffer layer on CIGSS with a total area efficiency of 13.7%.Résumé : Le plus haut rendement pour des cellules solaires en couche mince de Cu(Ga,In)Se 2 (CIGS) a été obtenu avec des couches tampons de CdS préparées par une méthode de croissance en solution, appelée dépôt en bain chimique (CBD). Le but est de développer des cellules solaires chalcopyrites en couches minces sans Cd et nous décrivons ici les concepts de base de la technique CBD. Nous présentons les recettes développées dans notre laboratoire pour faire des dépôts hétérogènes de haute qualité de couches minces de ZnO, ZnSe et MnS. Afin d'optimiser le processus, nous utilisons la spectroscopie X des photoélectrons (XPS) pour étudier la formation initiale de couches minces de ZnSe déposées en bain chimique sur du Cu(Ga,In)(S,Se) 2 (CIGSS) et le développement subséquent des hétérojonctions ZnSe/(CIGSS). Le bon recouvrement de la surface est contrôlé en mesurant les changements dans la structure électronique de la bande de valence aussi bien que dans les lignes du coeur In4d, Zn3d. Ces mesures nous indiquent que le taux de croissance est d'environ 3,6 nm/min. Les décalages E V et E C des bandes de valence et de conduction entre les couches sont de 0,60 et 1,27 eV respectivement pour l'interface CIGSS/ZnSe. Nous analysons le diagramme des bandes

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Section: Chemical Bath Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells

Ennaoui¹

2000

Can. J. Phys.

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“…6 It has been reported that ZnO film between the TCO film and the CdS film improves the performance of CIGS thin film solar cell. [7][8][9] The role of * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell

Choi¹,

Cha²,

Jung³

et al. 2016

j nanosci nanotechnol

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The CuIn(x)Ga(1-x)Se2 (CIGS) using the solution-based fabrication method is attractive for thin film solar cells because of its possibilities for large-area and low-cost production. ZnO films between transparent conductive oxide (TCO) and the CdS films can improve the performances of CIGS thin-film solar cells. In this study, we investigated the characteristics of ZnO film between TCO and CIGS layers in a solar cell (AZO/ZnO/CdS/CIGS/Mo), which were deposited at various thicknesses to investigate the role of the films in CIGS solar cells. It was confirmed that the conversion efficiency of a CIGS solar cell depends on the ZnO film. For a ZnO film thickness of 80 nm, the highest power conversion efficiency that a solar cell achieved was J(sc) of 18.73 mA/cm2.

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“…It is used in various technological fields such as transparent electrodes, solar cells, gas sensors, piezoelectric devices and surface acoustic wave devices [1]. The ZnO thin films have become a promising material of TCO for making solar cells based on a-Si and Cu(InGa)Se 2 [2], the advantages of zinc oxide are low material cost and stability in hydrogen plasma as compared to ITO and SnO 2 films. Optoelectronic performances of ZnO films doped with Group III elements such as boron (B) [3], indium (In) [4], aluminum (A1) [5] and gallium (Ga) [6] have been reported.…”

Section: Introductionmentioning

confidence: 99%

Effects of ZnO buffer layer on the optoelectronic performances of GZO films

Hsu

Tsang

2008

Solar Energy Materials and Solar Cells

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Large area ZnO films optimized for graded band-gap Cu(InGa)Se2-based thin-film mini-modules

Cited by 41 publications

References 2 publications

Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells

Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells

Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell

Effects of ZnO buffer layer on the optoelectronic performances of GZO films

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