Effects of ZnO buffer layer on the optoelectronic performances of GZO films

Synthesis, characterization and optical properties of Zn1−xTixO nanoparticles prepared via a high-energy ball milling technique

“…This is because ZnO can absorb UV light through a process of electronic transition between the valence band and conduction band. Due to its unique properties, ZnO nanoparticles have been extensively used in various applications such as UV absorption [2], discoloration [3], optoelectronic devices [4] and antibacterial activity [5].…”

Structure and properties of GZO thin films grown on ZnO buffer layers

“…The diameter and thickness of the sputtering targets (commercially available hot-pressed and sintered targets) of GZO and ZnO were 50.8 mm and 6 mm, both of 99.995% purity. The doping amount of Ga 2 O 3 in ZnO powder used in this study was 3 wt% [15]. Before the experiment began, the target was pre-sputtered for 10 min in order to remove any contamination.…”

Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates

“…This leads to high lattice strain, more defects and misfit strain of the GZO thin films [13,18]. Therefore, several research groups have examined the growth of ZnO and GZO epitaxial thin films by introducing hetero-buffer layers, such as MgO, GaN and SiC or ZnO homo-buffer layer, to overcome these difficulties occurring in between the thin films and substrates [19][20][21][22][23][24]. Khranovskyy et al [22] have reported that the crystallinity, photoluminescence characteristics and electrical properties of epitaxial ZnO thin films grown on a Al 2 O 3 substrate at 300 1C, are improved by introducing a ZnO buffer layer compared to the properties of pure ZnO films grown on a nonbuffered substrate.…”