Large-area low-damage plasma sources driven by multiple low-inductance-antenna modules for next-generation flat-panel display processes

Setsuhara, Yuichi; Takenaka, Kosuke; Ebe, Akinori

doi:10.1016/j.surfcoat.2008.06.001

Cited by 6 publications

(7 citation statements)

References 22 publications

(22 reference statements)

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“…In our previous works, plasma interactions with polymer materials and biological molecules without liquid surrounding the molecules were examined by surface analysis with X-ray photoelectron spectroscopy (XPS), in terms of physical and chemical interactions using plasmas sustained with low-inductance antenna (LIA) modules at a low pressure. [16][17][18][19] On the basis of scientific knowledge obtained from those works, the present study extends the investigations further on plasma interactions with organic materials through the gas/liquid interface as fundamental processes in plasma medicine.…”

Section: Introductionmentioning

confidence: 55%

Plasma Interactions with Organic Materials in Liquid through Plasma/Liquid Interface

Takenaka

Setsuhara

2013

Jpn. J. Appl. Phys.

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Plasma interactions with organic materials through the plasma/liquid interface as fundamental processes in plasma medicine have been investigated by degradation of methylene blue (MB) by irradiating with Ar/water mixture plasma. The optical emission spectra of Ar/water mixture plasma show considerable emissions of Ar lines, and the emission of H and OH radicals attributed to dissociation of water (H2O) in Ar/water mixture plasma has been confirmed. Variation in the molecular structure of MB in aqueous solution treated with the plasma has been observed by Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The results obtained from FT-IR and XPS analyses show that the Ar/water plasma exposure enables the degradation of organic materials in solution owing to oxidation by irradiated radicals from plasma through the plasma/liquid interface.

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Section: Introductionmentioning

confidence: 55%

Plasma Interactions with Organic Materials in Liquid through Plasma/Liquid Interface

Takenaka

Setsuhara

2013

Jpn. J. Appl. Phys.

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“…26) The ICP was generated with a low-inductance antenna. [30][31][32][33][34][35][36][37] The etcher was developed in house. Cl 2 gas at a flow rate of 50 sccm was introduced into the chamber through a showerhead at the counter of the wafer surface.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The densities of both electron and negative ions were estimated to be on the order of 10 11 cm −3 from literature values. [30][31][32][33][34][35][36][37] The stage made of SiC in the etcher was heated by infrared irradiation using an infrared lamp system (Thermo Riko GV) to be temperatures in the range from 300 to 600 °C. The stage temperature was measured using a pyrometer (LEC infrared thermometer) with calibration of the aluminum melting point.…”

Section: Experimental Methodsmentioning

confidence: 99%

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma

Liu

Ishikawa

Imamura

et al. 2018

Jpn. J. Appl. Phys.

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Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

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“…In this system, the U-shaped antenna was designed to decrease the route inductance. The LIA antenna is covered with an insulator so as to suppress arc discharge when high power RF is applied [6] . There are three consecutive chambers for the thin film preparation, where the deposition chamber is kept at a high vacuum of 10 −6 Torr.…”

Section: Methodsmentioning

confidence: 99%

High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

Chen¹,

Wang²,

Cherng³

et al. 2014

Plasma Sci. Technol.

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The plasma parameters in ICP-CVD system with internal low inductance antennas (LIA) were diagnosed by Langmuir probe. The ions density (Ni) reached 10 11-10 12 cm −3 , and the electron temperature (Te) was below ca. 2 eV, which was slightly decreased with applied power. A p-type hydrogenated microcrystalline silicon (µc-Si:H) film was prepared on glass substrate. After optimization of the processing parameters in flow ratio of SiH4:B2H6:H2, a high quality µc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.

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Large-area low-damage plasma sources driven by multiple low-inductance-antenna modules for next-generation flat-panel display processes

Cited by 6 publications

References 22 publications

Plasma Interactions with Organic Materials in Liquid through Plasma/Liquid Interface

Plasma Interactions with Organic Materials in Liquid through Plasma/Liquid Interface

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma

High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

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