Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses

Ryu, Sang‐Gil; Gruber, Ivan; Grigoropoulos, Costas P.; Poulikakos, Dimos; Moon, Seung-Jae

doi:10.1016/j.tsf.2012.07.052

Cited by 27 publications

(22 citation statements)

References 16 publications

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“…As the Raman beam is scanned into the Zone 1, it starts to show the characteristics of p-Si Raman spectra (peak 514. 6 and FWHM 16.4 -1 cm ), super-positioned over a-Si Raman spectra, which indicates a partial melting regime as reported in previous studies [12]. However, this regime ends within 4~5µm which implies that zone 1 is mostly dominated by p-Si, in good agreement with the simulation result in Figure 2 (b) which predicts the partial melting zone width to be ~ 7µm.…”

Section: Optical Microscopysupporting

confidence: 90%

57‐2: Scalable Crystallization of a‐Si Film on a Glass Substrate by Using a Blue Laser

Park

Hong

Jung

et al. 2018

Symp Digest of Tech Papers

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A continuous-wave blue laser annealing (BLA) system (λ ~ 440 nm) is applied to delineate the physical phenomenon of lowtemperature crystallization from amorphous Si (a-Si) thin film to poly-Si film on glass substrates for potential industrial application. At various scanning speeds and laser intensities, crystallization mechanism of BLA has been studied. It shows that BLA can achieve high quality, smooth poly-Si film with laterally grown grains with sizes of 4×10 µm, as studied by optical microscopy, Raman spectroscopy, and AFM. The pchannel poly-Si TFT on glass exhibited the field-effect mobility of 120.82 cm 2 /Vs and subthreshold swing of 284mV/dec. Therefore, it proves that BLA can substitute conventional annealing processes as a reliable, scalable, and economical tool.

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Section: Optical Microscopysupporting

confidence: 90%

57‐2: Scalable Crystallization of a‐Si Film on a Glass Substrate by Using a Blue Laser

Park

Hong

Jung

et al. 2018

Symp Digest of Tech Papers

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“…The average roughness R a is measured to be 2 ~ 3 nm in the center region ( Fig. 2(a)), showing smoother top surface of crystalline Si as previously suggested [7].…”

Section: Crystal and Surface Morphologysupporting

confidence: 80%

35.1: Blue‐Diode Laser Annealing of Amorphous Silicon Films for Low‐Cost, Large‐Scale Manufacturing of Advanced Displays

Park

Hong

Jung

et al. 2018

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Blue diode laser annealing (BLA) systems have been successfully developed for low‐temperature crystallization from amorphous silicon film on glass substrates. It is demonstrated that it can achieve high quality poly‐Si film with large grain sizes, as studied by optical microscopy, Raman spectroscopy and AFM measurements. The p‐channel poly‐Si TFT on glass using BLA exhibited the field‐effect mobility of 168.05 cm2/Vs and subthreshold swing of 220 mV/dec. BLA is scalable to large‐scale display manufacturing and significantly lowers the capital expense and operating cost, since diode lasers are highly reliable and rugged, remarkably efficient, and maintenance‐free, allowing 24/7 operations without the need of consumables. The BLA system consists of an array of high‐power blue diode lasers (λ ~ 450 nm) and beam‐shaping optics to produce a line‐shaped beam which can be scanned at high speed to anneal the Si film in a single scan, where the high scan speed minimizes thermal stress. The scan‐to‐scan is seamless to cover a large panel such as G6 or G8 without glass damage. The physical phenomena responsible for melting and recrystallization are explained by heat transfer simulations for process optimization.

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“…Unique morphologies, such as high-aspect-ratio pillars or flat crystals, have also been observed as a result of the laser crystallization of a-Si films, where the specific type of morphology depends on details related to the laser and processing parameters [6,[9][10][11][12][13][14][15]. As the laser fluence is increased, the silicon melts and starts to flow in response to interfacial tension coupled with substrate interactions.…”

Section: Introductionmentioning

confidence: 99%

Impact of substrate composition on the morphology and conductivity of laser-crystallized silicon films

et al. 2015

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We present a combined theoretical and experimental study of the morphology and conductivity of thin silicon films crystallized with a 355-nm-pulsed laser from amorphous silicon on a variety of substrates. Amorphous silicon (a-Si) films were grown through plasma-enhanced chemical vapor deposition and crystallized using a frequency-tripled Nd:YVO 4 laser. The films were characterized using optical, scanning electron, and atomic force microscopy, Raman spectroscopy and X-ray diffraction. To interpret the measurements, the influence of the thermal properties of the substrate material on the crystallization process was simulated by numerically solving the heat diffusion equation in response to individual laser pulses. In contrast to the simulations, our measurements show a much stronger dependence of the electronic and morphological characteristics of the films on the nature of the underlying material, which we interpret through variations in the wettability of liquid silicon (L-Si) on the substrate.

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Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses

Cited by 27 publications

References 16 publications

57‐2: Scalable Crystallization of a‐Si Film on a Glass Substrate by Using a Blue Laser

57‐2: Scalable Crystallization of a‐Si Film on a Glass Substrate by Using a Blue Laser

35.1: Blue‐Diode Laser Annealing of Amorphous Silicon Films for Low‐Cost, Large‐Scale Manufacturing of Advanced Displays

Impact of substrate composition on the morphology and conductivity of laser-crystallized silicon films

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