Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

We have used deep level transient spectroscopy (DLTS) to characterize defects in ZnO grown by pulsed-laser deposition (PLD). Using high resolution Laplace DLTS, we found that at the high temperature side of the commonly observed defect E3 (about 300 meV below the conduction band) another close lying peak (E3′ with thermal activation energy of 370 meV) is also observed. The concentration ratio of E3 and E3′ depends on the annealing history of the samples. It is most prevalent in as-grown samples and samples that had been annealed in an oxygen atmosphere. This suggests that E3′ may be related to the incorporation of oxygen in the lattice. Electron capture onto that E3′ defect strongly increases with increasing temperature.

Section: Resultsmentioning

confidence: 99%

“…We have used DLTS as well as high-resolution Laplace DLTS [7] and [8] to characterize the defects in this ZnO. In this study, we concentrated on the defects that have DLTS peaks in the 160-190 K temperature range.…”

Section: Methodsmentioning

confidence: 99%

Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Auret

Meyer

Rensburg

et al. 2007

“…degreasing, isochronal anneal at 300 °C in Ar for 10 min, immersing in dilute HF, then blow drying in N 2 ). The silicide formation and EBD-induced defects were electrically characterized by current-voltage (I-V), capacitance-voltage (C-V), (C-) and Laplace deep level transient spectroscopy (L-DLTS) [3] and [4] measurements on the Schottky contacts. The electrical characterization was repeated after every annealing cycle in Ar gas for 30 min between 100 and 600 °C in steps of 100 °C, to investigate the silicide formation and defect annealing behavior.…”

Section: Openup (December 2007)mentioning

confidence: 99%

Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Nyamhere

Chawanda

Das

et al. 2007

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and may lead to an incorrect picture of annealing studies of these defects. In order to overcome this problem, we have annealed (1) ruthenium (Ru), cobalt (Co), nickel (Ni) and platinum (Pt) SBDs to form stable silicides on phosphorus (P) doped Si and (2) have measured the electrical characteristics of defects introduced during diodes fabrication by electron beam deposition (EBD), using conventional and

“…In this paper, we demonstrate that Laplace deep level transient spectroscopy (L-DLTS) [4] and [5] provides the high resolution to study the electronic and annealing properties of among others, closely spaced discrete level defects that cannot be achieved using conventional DLTS [6]. We have used electron-irradiated B-and Ga-doped, epitaxial and Cz grown Si as examples, respectively.…”

Section: Introductionmentioning

confidence: 99%

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Nyamhere

Deenapanray

Auret

et al. 2006

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B-and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.