Lanthanum-substituted bismuth titanate for use in non-volatile memories

Park, Bae Ho; Kang, Bo Soo; Bu, Sang Don; Noh, T. W.; Lee, Jaichan; Jo, William

doi:10.1038/44352

Cited by 2,148 publications

(1,128 citation statements)

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“…Ferroelectric thin films are constrained by substrates and therefore their properties can be affected by many factors, such as orientation, properties of the substrate (lattice parameters and thermal expansion coefficient) and film thickness. For some applications, as for example in ferroelectric memories and piezoelectric devices, a large remanent polarization, good fatigue-free characteristics and a high piezoelectric response are required [6].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Simões

Riccardi

González

et al. 2007

Materials Research Bulletin

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Bismuth titanate (Bi 4 Ti 3 O 12 -BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO 2 /Si (1 0 0) (Pt) bottom electrodes at 700 8C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. On the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. #

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Section: Introductionmentioning

confidence: 99%

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Simões

Riccardi

González

et al. 2007

Materials Research Bulletin

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“…[1][2][3][4]61 As a member of BLSFs, SBT is one of the candidates that have potential application in the dielectric, ferroelectric and piezoelectric devices. 50,54,61,68 Studies on dielectric properties of the Er doped samples have also been carried out.…”

Section: Dielectric Propertiesmentioning

confidence: 99%

“…[1][2][3][4][5] Recently, what make ferroelectrics new interesting are their ferroelectric-photo, 6 ferroelectric-elastic, 7 ferroelectric-elastic-magnetic, 8 ferroelectric-mechanical 9, 10 integration and/or coupling, which can lead to a remarkable progress with numerous new materials and devices for photovoltaic 6 and spintronic applications, 8 opticalelectro-mechano actuator and sensor applications. 9,10 Along with the intensive development of ferroelectric materials and devices with multiple functions, we have developed praseodymium (Pr 3+ ) doped optical-electorally integrated ferroelectrics which showed novel photoluminescence while retaining strong ferroelectric properties, they are BaTiO 3 -CaTiO 3 : Pr, 10-12 Na 0.5 Bi 0.5 TiO 3 : Pr, 13 Na 0.5 K 0.5 NbO 9 : Pr, 14 2-, where A is a large 12-coordinate cation and B is a small 6-coordinate cation with a d 0 electron configuration; A can be mono-, di-, or trivalent ions or a mixture of them, B represents tetra-, penta-, or hexavalent ions, and the subscripts m and m-1 are the numbers of oxygen octahedron and pseudo-perovskite units in the pseudo-perovskite layers, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Since the 1960s, the series of BLSFs have been intensively studied for their potentially wide applications in dielectric, ferroelectric, piezoelectric, pyroelectric, electrooptic, and photocatalytic and biosensing fields. 1,2,4,5,[15][16][17][18] Many groups confirmed that doping with rare earth elements such as La 3+ , Pr 3+ , Ce 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Dy 3+ , Gd 3+ and Ho 3+ etc. 2,4,5,19,20 could effectively modify BLSFs' electric properties.…”

Section: Introductionmentioning

confidence: 99%

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Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi4Ti4O15

Peng

Zou

et al. 2012

AIP Advances

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Er3+ doped SrBi4Ti4O15 (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er3+ concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from 4S3/2, and 4F9/2 to 4I15/2, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d33 compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d33. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices

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“…On the other hand, some researchers found that among the lanthanoidal dopants, La 3? (Lanthanum) is frequently added to other bismuth-based layer perovskite ceramics in order to lower its tand value with decrease in conductivity, improvements in ferroelectric properties, and improved fatigue resistance [13][14][15]. Chakrabarti et al [16] [18] that, the substitution with La 3?…”

Section: Introductionmentioning

confidence: 99%

Investigation of site selectivity of lanthanum in SrBi4Ti4O15 ceramic by structural, dielectric, ferroelectric and conduction behavior

Nayak

Badapanda

Panigrahi

2016

J Mater Sci: Mater Electron

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This manuscript reports the structural and electrical properties of Lanthanum substituted strontium bismuth titanate with general formula SrBi 4-x La x Ti 4 O 15 (where 0 B x B 0.25), prepared by solid-state reaction route. X-ray diffraction study shows a single phase orthorhombic structure in all the compositions. It was also observed that the lattice parameter increases up to x = 0.15 and then decreases with further La content. The Raman spectra shows the distribution of lanthanum into the perovskite layers and (Bi 2 O 2 ) 2? layers of SrBi 4 Ti 4 O 15 ceramic. The temperature dependent dielectric study reveals that the transition temperature and maximum dielectric constant decreases with La content. The broadening of the phase transition was observed with La substitution due to the decrease in octahedral distortion. Impedance analysis confirms the presence of two semicircular arcs in doped samples, suggesting the existence of grain and grain-boundary conduction. The P-E loop study shows that both the remnant polarization (P r ) and the coercive field increases with the increasing La content up to x = 0.15 and thereafter decreases to lower values with further La content. Similar kind of trend is also observed in DC conductivity.

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Lanthanum-substituted bismuth titanate for use in non-volatile memories

Cited by 2,148 publications

References 17 publications

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi4Ti4O15

Investigation of site selectivity of lanthanum in SrBi4Ti4O15 ceramic by structural, dielectric, ferroelectric and conduction behavior

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