Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Simões, Alexandre Zirpoli; Riccardi, C. S.; González, Alejandra Hortência Miranda; Ries, Andreas; Longo, Elson; Varela, José Arana

doi:10.1016/j.materresbull.2006.08.014

Cited by 16 publications

(5 citation statements)

References 12 publications

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“…For practical applications, the films are preferred to be less conductive. As previously verified in early work of our group [35], the oxygen vacancies concentration is affected by the annealing atmosphere. The thermal treatment in oxidant atmosphere in materials with p-type conductivity increases defects as Bi or Ti vacancies.…”

Section: Resultssupporting

confidence: 78%

Dielectric Spectroscopy Analyses of SrBi₄Ti₄O₁₅ Films Obtained from Soft Chemical Solution

Simões¹,

Riccardi²

2009

Advances in Materials Science and Engineering

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SrBi4Ti4O15(SBTi) thin films were deposited by the polymeric precursor method on Pt bottom electrodes. The obtained films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and dielectric spectroscopy analyses. The capacitance-voltage (C-V) characteristics of perovskite thin film showed normal ferroelectric behavior. The remanent polarization and coercive fields were 5.4 μC/cm2and 85 kV/cm, respectively. Dielectric spectroscopy was employed to examine the polycrystalline behavior of ferroelectric material and the mechanisms responsible for the dielectric performance of the thin film.

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Section: Resultssupporting

confidence: 78%

Dielectric Spectroscopy Analyses of SrBi₄Ti₄O₁₅ Films Obtained from Soft Chemical Solution

Simões¹,

Riccardi²

2009

Advances in Materials Science and Engineering

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“…Furthermore, it has often been discussed that these "defects" can then trap carriers and become p-or n-type centers. [5][6][7][8]22 For instance, the surfaces of FE thin films are highly susceptible to creation of oxygen vacancies during processing and an electrode-FE film interface is often thought to be forming a Schottky contact and a commensurate depletion layer. While the effect of the internal electric fields due to surfaces, structural variations, and trapped charges, and other defect microstructures on the properties of FEs is well-understood, theoretical studies of the imprint phenomenon have focused on charge injection and frozen average electrostatic fields.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Misirlioglu

Okatan

Alpay

2010

Journal of Applied Physics

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Ferroelectric thin films often exhibit a displacement of the polarization versus the electric field hysteresis loops, particularly along the electric field axis. This shift is typically attributed to structural and electronic asymmetry of the film-electrode interfaces, asymmetric surface fields, as well as space charge regions. In this study, we analyze the effect of a spatial, continuous distribution of space charge on the hysteresis response and phase transition characteristics of epitaxial ͑001͒ PbZr 0.3 Ti 0.7 O 3 thin films sandwiched between metallic electrodes on ͑001͒ SrTiO 3 substrate. Using a nonlinear thermodynamic model, we compute numerically the internal electrical fields and polarizations for several different space charge distributions both in the presence of a triangular external electric field and as a function of temperature at zero applied field. We show that space charge accumulated near the metal-ferroelectric interfaces can dramatically displace the hysteresis along the electric field axis such that the otherwise symmetric coercive fields E C − and E C + in a bulk ferroelectric related to each other through ͉E C −͉ = E C + may shift depending on the space charge concentration in such a manner that both E C − , E C + Ͼ 0 or E C − , E C + Ͻ 0. This gives rise to a very strong imprint. Our findings reveal that the presence of space charges in ferroelectric thin films results in significant changes in the phase transition characteristics, including a reduction in the phase transition temperature, smearing of the transition over a temperature range instead of a sharp dielectric anomaly at the bulk Curie temperature, and a reduction in the dielectric response compared to defect-free ferroelectrics of the same composition.

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“…), film thickness, and testing conditions. [155][156][157][158] It is because of the numerous influencing factors that there are many ways to improve the ferroelectricity of perovskite ferroelectric oxide films. Recently, Cho et al [159] added 25% BiFeO 3 (BFO) to SrTiO 3 (STO) and BaTiO 3 (BTO), respectively, to form BFO25-BTO75 and BFO25-STO75 solid solution films, and compared with undoped BTO100 film.…”

Section: Improved Ferroelectric Properties By Alloyingmentioning

confidence: 99%

“…), film thickness, and testing conditions. [ 155–158 ] It is because of the numerous influencing factors that there are many ways to improve the ferroelectricity of perovskite ferroelectric oxide films. Recently, Cho et al.…”

Section: Fundamental Physical Properties and Applications Of Perovski...mentioning

confidence: 99%

Perovskite Oxide Ferroelectric Thin Films

Tian

Yang

2022

Adv Elect Materials

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be roughly divided into perovskite-type, lithium niobate type, tungsten bronze type, potassium dihydrogen phosphate type, triglycine sulphate type, Rochelle salt, ferroelectric liquid crystal, and ferroelectric polymer. Among these ferroelectric thin film materials, perovskite ferroelectric films and ferroelectric polymer films are relatively well-studied films. The outstanding ductility and flexibility of ferroelectric polymer films like polyvinylidene fluoride (PVDF) have made them popular in flexible electrical devices. [7][8][9] However, some disadvantages of ferroelectric polymer films, such as low polarization strength, large coercive field, slow switching speed, and poor temperature resistance limit their application in fields including ferroelectric memory, piezoelectric energy harvesting or sensors. [10][11][12] To apply them to these fields, they need to be appropriately combined with perovskite oxide materials to improve their ferroelectric properties. For example, some researchers doped 0.5((Ba 0.7 Ca 0.3 )TiO 3 )-0.5(Ba(Zr 0.2 Ti 0.8 ) O 3 ) (BCZT) ceramic particles into PVDF to make BCZT/PVDF composite film. PVDF is a semicrystalline ferroelectric polymer, doping it with BCZT improves its crystallinity and hence its dielectric constant. The dielectric constants of the γ-PVDF phase and α-PVDF phase in pure PVDF films are ≈10 and 7.5. After doping with BCZT, the dielectric constants increase to 31 and 20, which improves the ferroelectric properties of PVDF. [13] There are many other examples of enhancing the ferroelectric properties of PVDF films by doping with perovskite oxides. [14][15][16][17][18][19][20] Obviously, enhancing the ferroelectric properties of PVDF by this method will make the preparation process relatively tedious and is not conducive to mass production. It is not as convenient as growing perovskite ferroelectric films directly on flexible substrates. In addition, polymers' poor temperature resistance limits their utilization compared to ferroelectric oxide thin film materials' superior temperature resistance and physical properties. The composite dielectric film composed of BiFeO 3 (BFO) and SrTiO 3 (STO) has a reversible energy storage density (U e ) of about 70 J cm −3 at room temperature and can operate stably between −60 and 100 °C. [21] BaZr 0.35 Ti 0.65 O 3 (BZT) has a U e of 78.7 J cm −3 at room temperature and can work stably between −150 and 200 °C, and the U e still exceeds 40 J cm −3 at 200 °C. [22] But polymer-based ferroelectric materials often cannot be applied at high temperatures and have a low energy storage density (<40 J cm −3 ). [23,24] The high temperature special design can meet the temperature requirements, but the dielectric properties need more optimization. [25,26] The spontaneous polarization of BaTiO 3 (BTO) is about 25 µC cm −2 , [27] and the spontaneous polarization of stress-modulated BTO Perovskite oxide thin film materials are used in various fields of human life due to their excellent physical properties. The high performance thin films in turn prov...

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Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Cited by 16 publications

References 12 publications

Dielectric Spectroscopy Analyses of SrBi₄Ti₄O₁₅ Films Obtained from Soft Chemical Solution

Dielectric Spectroscopy Analyses of SrBi₄Ti₄O₁₅ Films Obtained from Soft Chemical Solution

Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Perovskite Oxide Ferroelectric Thin Films

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Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Cited by 16 publications

References 12 publications

Dielectric Spectroscopy Analyses of SrBi4Ti4O15 Films Obtained from Soft Chemical Solution

Dielectric Spectroscopy Analyses of SrBi4Ti4O15 Films Obtained from Soft Chemical Solution

Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Perovskite Oxide Ferroelectric Thin Films

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Dielectric Spectroscopy Analyses of SrBi₄Ti₄O₁₅ Films Obtained from Soft Chemical Solution

Dielectric Spectroscopy Analyses of SrBi₄Ti₄O₁₅ Films Obtained from Soft Chemical Solution