Landau Quantization of Topological Surface States in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Cheng, Peng; Song, Can-Li; Zhang, Tong; Zhang, Yanyi; Wang, Yilin; Jia, Jin; Wang, Jing; Wang, Yayu; Zhu, Bang Fen; Chen, Xi; Ma, Xu-Cun; He, Ke; Wang, Lili; Dai, Xi; Fang, Zhong; Xie, X. C.; Qi, Xiao Liang; Liu, Chao Xing; Zhang, Shou Cheng; Xue, Qi Kun

doi:10.1103/physrevlett.105.076801

Cited by 367 publications

(206 citation statements)

References 27 publications

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“…Angle-resolved photoemission spectroscopy (ARPES) measurements carried out in situ were used to show that the Fermi energies of these films lie in the band gap of the bulk, intersecting with the Dirac cone of the surface states [18,19]. The TI properties of the films were also confirmed by observation of standing waves and Laudau levels [22,26].…”

Section: Introductionmentioning

confidence: 93%

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Atomically smooth ultrathin films of topological insulator Sb2Te3

et al. 2010

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The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb 2 Te 3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb 2 Te 3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb 2 Te 3 films down to five quintuple layers (QLs).

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Section: Introductionmentioning

confidence: 93%

“…These gapless surface states, protected by time-reversal symmetry, are very robust. So far, topological surface states have been observed in Bi 1-x Sb x , Bi 2 Se 3 , and Bi 2 Te 3 [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Atomically smooth ultrathin films of topological insulator Sb2Te3

et al. 2010

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“…Second, although doping can be used to create large changes in the spatially averaged chemical potential, using this method to manipulate the local potential is non-trivial 14 . Finally, although backscattering is forbidden in TIs, as demonstrated by Landau level measurements 15 , surface dopants have been shown to have a strongly detrimental effect on the electron coherence and lifetime 15 .…”

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confidence: 99%

Ripple-modulated electronic structure of a 3D topological insulator

et al. 2012

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3D topological insulators, similar to the Dirac material graphene, host linearly dispersing states with unique properties and a strong potential for applications. A key, missing element in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Analogy with graphene suggests a possible avenue via a topographic route by the formation of superlattice structures such as a moiré patterns or ripples, which can induce controlled potential variations. However, while the charge and lattice degrees of freedom are intimately coupled in graphene, it is not clear a priori how a physical buckling or ripples might influence the electronic structure of topological insulators. Here we use Fourier transform scanning tunneling spectroscopy to determine the effects of a one-dimensional periodic buckling on the electronic properties of Bi 2 Te 3. By tracking the spatial variations of the scattering vector of the interference patterns as well as features associated with bulk density of states, we show that the buckling creates a periodic potential modulation, which in turn modulates the surface and the bulk states. The strong correlation between the topographic ripples and electronic structure indicates that while doping alone is insufficient to create predetermined potential landscapes, creating ripples provides a path to controlling the potential seen by the Dirac electrons on a local scale. Such rippled features may be engineered by strain in thin films and may find use in future applications of topological insulators.

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“…11,14 These electronic states are metallic and robust to the time reversal invariant perturbations like non-magnetic impurities, defects and vacancies in the sample and have been experimentally probed by various experimental techniques, such as angle resolved photoemission spectroscopy (ARPES), scanning tunnelling microscopy (STM) and quantum interference experiments at low temperatures. 9,11,12,[15][16][17] In recent times, intense research work has been carried out from a fundamental point of view both in theory as well as experiments to explore the new and exotic properties that topological insulators exhibit owing to their unique phase of quantum matter. 18,19 In addition to this, owing to the topologically protected surface states, these systems also open new platforms for device applications (low power spintronics) and quantum computing.…”

Section: Introductionmentioning

confidence: 99%

Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te

et al. 2015

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We explore the phase coherence of thin films of the topological insulator material Bi 2 Se 2 Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. Since PLD is an inexpensive technique, with the possibility to integrate with other materials, one can make devices which can be extremely useful for low power spintronics and topological quantum computation.

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Landau Quantization of Topological Surface States inBi2Se3

Cited by 367 publications

References 27 publications

Atomically smooth ultrathin films of topological insulator Sb2Te3

Atomically smooth ultrathin films of topological insulator Sb2Te3

Ripple-modulated electronic structure of a 3D topological insulator

Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te

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