Label Free DNA Detection Techniques Using Dielectric Modulated FET: Inversion or Tunneling?

Priyanka, Rathlavath; Chandrasekar, L. Bruno; Shaik, Rameez Raja; Pradhan, K P

doi:10.1109/jsen.2020.3019103

Cited by 19 publications

(6 citation statements)

References 29 publications

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“…Bergveld developed the first ionsensitive FET (IS-FET) biosensor, which could only detect charged biomolecules and provides accurate results without any changes in biomolecule properties [13]. However, the dielectric-modulated FET (DM-FET) biosensors can efficiently examine charged and neutral biomolecules [14,15]. The miniaturization of FET-based devices faces some challenges, such as high-power consumption, subthreshold swing (SS) > 60 mV dec −1 , short channel effects (SCEs), OFF-state leakage, drain-induced barrier lowering (DIBL), which degrades FET biosensor performance [16].…”

Section: Introductionmentioning

confidence: 99%

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

Panda

Dash

2023

Phys. Scr.

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This paper examines the sensitivity of a newly presented heterojunction dopingless tunnel field effect transistor (HJ-DLTFET) biosensor for the label-free detection of biomolecules. The etched nanocavity is introduced in the source metal region for better sensing ability. The dielectric constants (k) of five neutral biomolecules are employed in this paper to test the sensitivity of the proposed biosensor. The electrostatic performance is investigated based on transfer characteristics, energy band, tunneling distance (λ) at source/channel (S/C) interface, drain current (ID) variation for different dielectric constant (k), drain to source voltage (VDS) variation and mole fraction (x) variation respectively. Further, the RF performance analysis includes gate/source capacitance (Cgs), total gate capacitance (Cgg), cut-off frequency (ft), and maximum frequency (fm) analysis. Similarly, sensitivity analysis consists of current sensitivity (SID), current ratio sensitivity (Sratio), average SS sensitivity (SSS), Cgs sensitivity, Cgg sensitivity, ft sensitivity, and fm sensitivity. The investigation is carried out with the variation of neutral biomolecules in terms of various k inside the cavity. Similarly, the impact of charged biomolecules on the sensitivity of the proposed biosensor is investigated. The HJ-DLTFET sensor provides the maximum sensitivity SID of 1.56×1010, Sratio of 5.95×109, and SSS of 0.80 for Gelatin (k = 12.00) at room temperature using the Silvaco TCAD simulation tool. Combining a low band gap Si0.6Ge0.4 source with a high band gap silicon channel and a high-k (HfO2) improves drain current sensitivity without impacting leakage current.

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Section: Introductionmentioning

confidence: 99%

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

Panda

Dash

2023

Phys. Scr.

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“…[13,14] Several studies based on novel designs and structures of the device have already been reported to facilitate the advantages of TFET-based biosensors. [15][16][17][18][19][20][21][22][23] However, TFET devices present a disadvantage of ambipolarity, i.e., the presence of significant current at reverse bias conditions. This degrades the efficiency of the device in switching applications.…”

Section: Introductionmentioning

confidence: 99%

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Shaw

Mukhopadhyay

2023

Physica Status Solidi (a)

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Herein, an n‐channel dual material double gate tunnel field effect transistor (DMDG‐TFET) with a gate–drain underlap using Ge and Ge1−zSnz is proposed. An analytical model has been developed to optimize the length of the underlap region for Ge and Ge–Sn alloy as the channel material. The ambipolarity shown by TFET has been utilized to perform a label‐free biosensing in response to the change of permittivity of the biomaterials used in the gate–drain underlap region. The use of Ge–Sn alloy as a channel material results in a lower ambipolar current but higher sensitivity to the presence of biomolecules. DMDG with workfunction (4 and 4.4 eV) is used to optimize the device performance. The analytical results have been validated by the results obtained using commercial software (Silvaco TCAD). A high sensitivity of the biosensor device is obtained by utilizing the tunnel FET ambipolar current with optimized gate underlap of LUD = 55 nm (for Ge) and LUD = 38 nm (for Ge–Sn alloy).

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“…Biosensors designed with field effect transistors (FET) can perform the label-free electrical detection of various biomolecules. [10][11][12][13][14][15] When the biomolecules are exposed to the cavity, the dielectric constant (k) varies with it. The change in the k-value affects the electrical properties and thus can be used to detect their presence.…”

mentioning

confidence: 99%

“…[13][14][15] Researchers have designed a variety of FET-based biosensors, such as dielectric-modulated FET (DMFET), ion-sensitive FET (ISFET), bulk metal oxide semiconductor FET (MOSFET), and interband tunnel FET (TFET), for employing label-free detection. [10][11][12][13][14][15] Only positively charged biomolecules can be identified using an ISFET. 11 The DMFET, which can detect both charged and neutral biomolecules, was developed to address the constraints of an ISFET.…”

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confidence: 99%

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Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection

Dash,

Mishra

2024

ECS J. Solid State Sci. Technol.

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This research proposes a label-free detection of neutral and charged biomolecules using a graphene channel-based charge-plasma tunnel field-effect transistor (TFET). The presence of a graphene channel provides a greater tunneling barrier at the channel/drain interface, significantly reducing ambipolarity and increasing the current gradient in the ambipolar condition. A nanocavity is created underneath the drain metal to investigate the sensitivity. Here, the various analog sensitivity parameters of the suggested biosensor are evaluated for a few neutral biomolecules in the ambipolar condition, including gelatin, biotin, and 3-aminopropyl-triethoxysilane. The sensor's electrostatic performance, including its IDS-VGS characteristics, energy band, and tunneling distance, has been estimated in the ambipolar state. The sensitivity analysis is carried out in terms of ambipolar sensitivity, transconductance (Sgm), cut-off frequency sensitivity (Sft), and maximum frequency sensitivity (Sfm). Further research has been done to study the effects of deoxyribonucleic acid, a charged biomolecule (k = 6) with varied positive and negative charge densities, on various sensitivity parameters. The detailed simulation work for the designed biosensor is achieved using the 2D Silvaco ATLAS device simulation tool.

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Label Free DNA Detection Techniques Using Dielectric Modulated FET: Inversion or Tunneling?

Cited by 19 publications

References 29 publications

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection

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Label Free DNA Detection Techniques Using Dielectric Modulated FET: Inversion or Tunneling?

Cited by 19 publications

References 29 publications

A single gate Si1−xGex dopingless TFET functioned as an effective label-free biosensor

A single gate Si1−xGex dopingless TFET functioned as an effective label-free biosensor

Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection

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Product

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A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors