La 0.8 Sr 0.2 MnO 3 -heterostructure effects on the dielectric properties of PbTiO3-based thin films

Abstract

Articles you may be interested inAnalysis of diffuse phase transition and relaxorlike behaviors in Pb 0.5 Sr 0.5 Ti O 3 films through dc electric-field dependence of dielectric response Appl. Phys. Lett. 90, 242908 (2007); 10.1063/1.2748080Self-poled Pb ( Zr , Ti ) O 3 films with improved pyroelectric properties via the use of ( La 0.8 Sr 0.2 ) MnO 3 /metal substrate heterostructuresThe present paper deals with substrate heterostructure effects on the microstructure and dielectric properties of Sm, Er, and La doped lead titanate (PT) thin films. The substrate heterostructures chosen include Si/ ͑La 0.8 Sr 0.2 ͒MnO 3 (LSMO), Y-stabilized zirconia (YSZ)/LSMO and Si/ Pt. Both LSMO and PT thin films were processed via chemical solution deposition. The results are compared to those of Sm and Er doped lead-zirconate-titanate (PZT). It is shown that the dielectric properties, and particularly the ferroelectric-to-paraelectric transition temperature of PT, are strongly affected by the substrate heterostructure. In comparison to PT on platinized Si, the transition temperature is shifted by more than 100°C towards lower values in the case of Er and Sm doped PT on LSMO, while those of La doped PT and PZT are not affected at all. X-ray photoelectron spectroscopy investigations show a substantial interdiffusion between LSMO and PT. Particularly the diffusion of La towards the ferroelectric film and that of Pb towards LSMO are made responsible for the change in the dielectric properties. In the case of PZT we stipulate the formation of a stable pyrochlore diffusion barrier layer.

Microstructure and electrical properties of La0.7Sr0.3MnO3 thin films deposited by metallo-organic decomposition method

“…In the wet chemical process, the preparation of high-quality films depends strongly on the synthesis of an appropriate precursor, the coating, the crystallization conditions and the substrate used. There are numerous reports on the preparation of LSMO films by the wet chemical process using different precursor solutions on various substrates such as Si, SiO 2 /Si, Al 2 O 3 , Pt/Si, SrTiO 3 and Y-stabilized zirconia [7,[13][14][15][16][17]. However, it is also important to understand the relationships of the growth conditions with the microstructures and electrical properties of the LSMO films fabricated by the wet chemical process.…”

“…Grishin et al [6] reported that it is possible to grow epitaxial heterostructures of Pb(Zr, Ti)O 3 /LSMO onto LaAlO 3 (1 0 0) single crystal. Es-Souni et al [7] showed that the use of LSMO as bottom electrode for lead titanatebased films affects strongly their chemistry and consequently their properties.…”

“…LSMO is also a metallic oxide with a resistivity at room temperature of approximately 10 À5 O m [4]. Recently, LSMO films have attracted great interest, because of their potential to be used as a bottom electrode in the fabrication of ferroelectric memories and integrated ferroelectric microelectro-mechanical system (MEMS) devices [5][6][7]. It was reported that an LSMO electrode can improve the ferroelectric fatigue properties of ferroelectric Pb(Zr, Ti)O 3 films via annihilation of oxygen vacancies at the ferroelectric/electrode interface [5].…”

Microstructure and dielectric relaxor properties for Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructure

“…15͒ and PbTiO 3 / ͑La, Sr͒MnO 3 structures. 16 As a result, the formation of such an interdiffusive layer may have great influence on the electrical properties of BST/LSMO heterostructure. Furthermore, to analyze the crystallization and epitaxial behavior, a pattern of selected area electron diffraction ͑SAED͒ was taken from the area covering the interface of BST and LSMO films.…”

Effects of LaNiO3 buffer layer on the structures and properties of La0.7Sr0.3MnO3 thin films

“…LSMO is also a metallic oxide with a resistivity at room temperature of approximately 10 À5 O m [6]. Recently, LSMO films have attracted great interest, because of their potential to be used as a bottom electrode in the fabrication of ferroelectrics memories and integrated ferroelectric microelectro-mechanical system devices [7][8][9]. LSMO shows great potential to be used as a bottom electrode layer because of the following reasons.…”