${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

Wu, Jun; Fang, Yihao; Markman, Brian; Tseng, Hsin-Ying; Rodwell, M.J.W.

doi:10.1109/led.2018.2803786

Cited by 25 publications

(19 citation statements)

References 12 publications

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“…with state-of-the-art III-V MOSFETs. [26,33] The average velocity derived from the I D -V G characteristics is 4 × 10 5 m s −1 . This is slightly lower than the velocity determined from Figure 3B, but the transistor is still in the linear regime.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Shoron

Goyal

Guo

et al. 2020

Adv Elect Materials

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Electronic devices that operate at terahertz frequencies will require new materials that exhibit higher carrier velocities than traditional semiconductors. Calculations show that cadmium arsenide, a 3D topological (Dirac) semimetal, is an excellent candidate for field effect transistors that operate at frequencies above 1 THz. Moreover, such transistors have unique advantages that are enabled by the properties of Dirac electrons. These include predictions of an unprecedented linearity of the transconductance and cutoff frequencies over a large operating range and cutoff frequencies that remain above 1 THz at carrier densities as low as 1011 cm−2. The calculations are underpinned by measurements of devices with cadmium arsenide channels. Extremely low contact resistances (<2 × 10−9 Ω cm2), high electron velocities (>7 × 105 m s−1), and unprecedentedly large current densities (up to 10 A mm−1) are demonstrated. Current modulation (>50%) and transconductance already achieved in the early transistors show the potential for large (>10 ×) improvements by reducing interface trap densities. The results demonstrate the significant potential of topological semimetals for high‐speed transistors operating in the THz regime and open up new opportunities for next‐generation RF circuits.

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Shoron

Goyal

Guo

et al. 2020

Adv Elect Materials

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“…Especially electrochemical metallization effect based cells and unipolar switching thermochemical effect based cells stand out showing resistance ratios of more than 3 orders of magnitude . In comparison, metal‐oxide VCM BRS cells show lower ratios but still reaching up to 3 orders of magnitude in experimental devices . However, for high performance cells (fully integrated in advanced CMOS processes), the (mean value of the) R OFF / R ON ratio is typically in the range of 1 to 2 orders of magnitude only .…”

Section: Introductionmentioning

confidence: 99%

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Schönhals

Rosário

Hoffmann‐Eifert

et al. 2017

Adv Elect Materials

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NVM). Of those, redox-based resistive switching memory [2] (ReRAM) is of high interest, in particular for application in new storage class memory, [3,4] as well as a technology for scaled embedded NVM. [5][6][7] Recent results regarding switching speed, [8] cycling endurance, [9] scalability, [10] and integration [11] indicate an outstanding potential of metal-oxide based ReRAM technology for the above mentioned memory applications. Additionally, scenarios for use of ReRAM devices in novel application fields as neuromorphic computing or logic-in-memory have been demonstrated recently. [12,13]

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“…Minimum In0.52Al0.48As gate-insulator thickness is limited by gate leakage current; highk gate dielectrics truncate thermionic leakage current and reduce tunneling current at a given thickness while increasing the dielectric permittivity in the gated region providing a path forward. We report record f = 511 GHz for MOS-HEMT technology [1], [6]. While this technology has yet to surpass the maximum reported f of standard InP-based HEMTs [7], improvements in the access region design, optimization of channel design [8], and further scaling of the gate dielectric can further increase gm,e.…”

Section: Introductionmentioning

confidence: 90%

“…While this technology has yet to surpass the maximum reported f of standard InP-based HEMTs [7], improvements in the access region design, optimization of channel design [8], and further scaling of the gate dielectric can further increase gm,e. Specifically, VLSI-optimized III-V MOSFETs have demonstrated extremely high gm,e of 3.0 mS/μm [9] and 3.45 mS/μm [10], even at the relatively small VDS = 0.5 V and small (VGS-VT) associated with VLSI operation; larger gm,e would be expected at larger voltages [1]. We report improvements to [1] achieved by including an In0.52Al0.48As back-barrier (increase gm,i) and reducing the source-drain metal spacing from 5 µm to 2 µm (decrease RS).…”

Section: Introductionmentioning

confidence: 99%

In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz f_τ and 256 GHz f _max

Markman

Brunelli

Goswami

et al. 2020

IEEE J. Electron Devices Soc.

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An In0.53Ga0.47As/InAs composite channel MOS-HEMT exhibiting peak f = 511 GHz and peak fmax = 285 GHz is demonstrated. Additionally, another device exhibiting peak f = 286 GHz and peak fmax = 460 GHz is reported. The devices have a 1 nm / 3 nm AlxOyNz interfacial layer and ZrO2 gate dielectric on a 2 nm / 4 nm In0.53Ga0.47As / InAs composite channel with a modulation doped In0.52Al0.48As back barrier. To reduce parasitic gate-source and gate-drain capacitances, a modulation doped In0.52Al0.48As / In0.53Ga0.47As / InAs composite quantum well is included between the gate edges and the N+ source and drain. Compared to [1], addition of an In0.52Al0.48As back-barrier, scaling of S/D metal spacing, and scaling of channel thickness has enabled improved transconductance and increased f. Short gate length devices fmax are limit by high RG due to poor metal filling of the T-Gate stem and large CDS due to a conductive etch stop layer. Long gate length devices exhibit better metal filling, reduced RG, and balanced fꚍ, fmax. Devices exhibit 10-15% DC-1 GHz gm,e suggesting that the high-k / semiconductor interface has low Dit.

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${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

Cited by 25 publications

References 12 publications

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz f_τ and 256 GHz f _max

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${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

Cited by 25 publications

References 12 publications

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz f max

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In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz f_τ and 256 GHz f _max