Ku‐band high power internally matched GaN HEMTs with 1.5 GHz bandwidth

Abstract

Purpose -The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost-effective lossless compensated matching technique. Design/methodology/approach -Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi-section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain. Findings -With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2 þ 0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz. Originality/value -This paper provides useful information for the internally matched GaN HEMTs.

An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier

“…Therefore, the power amplifier (PA) needs to ensure that the adjacent channel leakage ratio (ACLR) criterion is met with in order for the transmitter to transmit high data rate without error 1 . Though gallium nitride (GaN)-based PA is capable of delivering high linear output power, it is found to be sensitive to input impedance which depends on its own gate periphery 2 . Therefore, GaAs power amplifiers, which have enhanced linearity performance compared to CMOS power amplifiers, are currently in demand in consumer communication due to their high-quality passives 3 .…”