Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse

Yang, Liting; Chai, Changchun; Fan, Q.; Shi, Chunlei; Xi, Xiaowen; Yu, Xinhai; Yang, Yintang

doi:10.1016/j.microrel.2016.09.002

Cited by 12 publications

(6 citation statements)

References 20 publications

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“…Besides, the channel in the region near the gate is also damaged, and the deviation of the gate to the source side is more serious. [6,[10][11][12] As shown in Fig. 12(c), there are small balls and pits formed after the material has melted at the fracture of the gate metal strip.…”

Section: Comparison With Experimental Resultsmentioning

confidence: 98%

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C band microwave damage characteristics of pseudomorphic high electron mobility transistor*

Sun

et al. 2021

Chinese Phys. B

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The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor (pHEMT) under the irradiation of C band high-power microwave (HPM) is investigated in this paper. Based on the theoretical analysis, the thermoelectric coupling model is established, and the key damage parameters of the device under typical pulse conditions are predicted, including the damage location, damage power, etc. By the injection effect test and device microanatomy analysis through using scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage, especially the side below the gate near the source. The damage power in the injection test is about 40 dBm and in good agreement with the simulation result. This work has a certain reference value for microwave damage assessment of pHEMT.

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Section: Comparison With Experimental Resultsmentioning

confidence: 98%

“…[10] Liu et al studied the combustion destruction characteristics of Ku band microwave pulses for GaAs pHEMT. [11,12] Yu et al [13] and Xi et al [14] studied the nonlinear and permanent degradation of GaAs-based LNA under electromagnetic pulse (EMP). Zhou et al studied the mechanism of GaN HEMT failure induced by HPM.…”

Section: Introductionmentioning

confidence: 99%

C band microwave damage characteristics of pseudomorphic high electron mobility transistor*

Sun

et al. 2021

Chinese Phys. B

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“…GaN-based devices can make up for the deficiencies of silicon-based devices due to the limitations of the traditional semiconductor materials, becoming one of the most promising candidates in the high-frequency and high-power area [4,6,7]. High output power means greater thermal generate power, and the resulting chip performance degradation is also an important reason for the large gap between actual working efficiency and theoretical efficiency [8][9][10], and so the heating problem needs to be taken seriously.…”

Section: Introductionmentioning

confidence: 99%

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Qin

Chai

et al. 2022

Micromachines

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The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.

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“…In the past several years, a great deal of research projects have focused on damage effects induced by EMI on bipolar devices [14,15], CMOS inverters [16] and GaAs HEMTs [12,17], which have proposed a series of theoretical failure mechanisms and hardening designs. Kyechong K et al [18] carried out a series of experimental studies of EMI effects and analyzed the mechanism on CMOS inverters induced by HPM.…”

Section: Introductionmentioning

confidence: 99%

Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse

et al. 2022

Self Cite

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Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. The mechanism is presented by analyzing the variation in the internal distribution of multiple physical quantities in the device. The results reveal that the device damage was dominated by different thermal accumulation effects such as self-heating, avalanche breakdown and hot carrier emission during the action of the high-power EMP. Furthermore, a multi-scale protection design for the GaN HEMT against high-power electromagnetic interference (EMI) is presented and verified by a simulation study. The device structure optimization results demonstrate that the symmetrical structure, with the same distance from the gate to drain (Lgd) and gate to source (Lgs), possesses a higher damage threshold compared to the asymmetrical structure, and that a proper passivation layer, which enhances the breakdown characteristics, can improve the anti-EMI capability. The circuit optimization results present the influences of external components on the damage progress. The findings show that the resistive components which are in series at the source and gate will strengthen the capability of the device to withstand high-power EMP damage. All of the above conclusions are important for device reliability design using gallium nitride materials, especially when the device operates under severe electromagnetic circumstances.

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Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse

Cited by 12 publications

References 20 publications

C band microwave damage characteristics of pseudomorphic high electron mobility transistor*

C band microwave damage characteristics of pseudomorphic high electron mobility transistor*

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse

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