C band microwave damage characteristics of pseudomorphic high electron mobility transistor*

Abstract

The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor (pHEMT) under the irradiation of C band high-power microwave (HPM) is investigated in this paper. Based on the theoretical analysis, the thermoelectric coupling model is established, and the key damage parameters of the device under typical pulse conditions are predicted, including the damage location, damage power, etc. By the injection effect test and device microanatomy analysis through using scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage, especially the side below the gate near the source. The damage power in the injection test is about 40 dBm and in good agreement with the simulation result. This work has a certain reference value for microwave damage assessment of pHEMT.

Failure Mechanism of pHEMT in Navigation LNA under UWB EMP

“…Li et al studied the damage effect characteristics of GaAs pHEMT under C-band high-power microwave. It is concluded that the gate metal in the first stage of the device is the most vulnerable to HPM damage [12]. Qin et al established an enhancement-mode p-gate AlGaN/GaN HEMT to investigate the self-heating and HPM effects from both electrical and thermal aspects.…”