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Benchouk, K.; Moctar, C. El; Bernède, J.C.; Marsillac, Sylvain; Pouzet, J.; Barreau, Nicolas; Emziane, Mahieddine

doi:10.1023/a:1004575612586

Cited by 7 publications

(5 citation statements)

References 8 publications

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“…If the peak intensity increases with the annealing temperature, the amount of binary phase also increases. This result is in good agreement with earlier results [4]. After a half hour annealing at 673 K, as usual for chalcopyrite compounds such as CuInSe 2 [7], the (112) peak dominates, which shows that the crystallites of the films are oriented along the (112) direction.…”

Section: Film Qualitysupporting

confidence: 92%

“…1) polycrystalline matrix. The presence of some Al 2 O 3 in the films with the deposition conditions used is probable as shown by Kim et al [4]. However, since a careful observation of the DRX diagram does not indicate the presence of an amorphous phase, Al 2 O 3 should be present in the films in very small domains, it may accumulate at the grain boundaries.…”

Section: Film Qualitymentioning

confidence: 82%

“…We have shown in an earlier paper [4] that the optimum annealing time is half an hour. Therefore all the films studied in the present work have been annealed for half an hour.…”

Section: Film Qualitymentioning

confidence: 93%

“…They have the same chalcopyrite structure, their band gap varies from 2 eV (X = Te) to 3.5 eV (X = S) and they can be either p or n type. We have shown earlier [4] that CuAlTe 2 films can be obtained by post-annealing under argon flow of Cu/Al/Te/Al...Cu/Al/Te sequentially deposited structures.…”

Section: Introductionmentioning

confidence: 92%

“…The process used to achieve CuAlTe 2 films has been described earlier [4], it will only be briefly recalled here. The films were sequentially deposited on soda lime glass in vacuum (5 × 10 −5 Pa) by thermal evaporation from three tungsten crucibles to give Cu/Al/Te/Al...Cu/Al/Te layers.…”

Section: Experimental Techniquementioning

confidence: 99%

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New buffer layers, large band gap ternary compounds: CuAlTe₂

et al. 2000

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After deposition, by evaporation under vacuum, of Al/Cu/Te. multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallised in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2−xTe degenerate phase present at the surface of the films. This effect can be suppressed by KCN etching of the samples that allows the superficial foreign phase to be dissolved.

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Section: Film Qualitysupporting

confidence: 92%

Section: Film Qualitymentioning

confidence: 82%

“…We have shown in an earlier paper [4] that the optimum annealing time is half an hour. Therefore all the films studied in the present work have been annealed for half an hour.…”

Section: Film Qualitymentioning

confidence: 93%

Section: Introductionmentioning

confidence: 92%

Section: Experimental Techniquementioning

confidence: 99%

See 3 more Smart Citations