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Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

“…In 2019, Schué et al observed a thermally stable bright luminescent emission at 215 nm ( 5.76 eV) from single crystal bulk h-BN, with the lowest-energy exciton having a binding energy of around meV (determined using ab initio calculations) [258] . Moreover, the dispersion of excitons in h-BN has revealed the presence of direct exciton at about 100 meV above the indirect one, which is responsible for the maximum of absorption in bulk h-BN, illustrating the origin of the Stokes shift observed in h-BN [277,278] . These results are consistent with highly efficient phonon-assisted luminescence.…”