Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Yakimov, E. E.; Yakimov, E. B.

doi:10.1002/pssa.202200119

Cited by 3 publications

(2 citation statements)

References 40 publications

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“…As shown in [ 38 ], some dislocations can move under electron beam excitation even at liquid nitrogen temperature, which means that, in such conditions, the activation energy for dislocation glide is close to 0. It is similar to REDG in 4H-SiC, for which it was shown that the low activation energy for REDG is determined by the very low activation energy for kink migration along partial dislocations [ 56 , 57 ]. It should be noted that, contrary to the case of 4H-SiC, in all measurements of REDG in GaN, only a small number of dislocations became mobile, which allows one to assume that dislocation pinning on obstacles essentially affects the dislocation motion.…”

Section: Introductionmentioning

confidence: 79%

An Experimental Study of Dislocation Dynamics in GaN

Yakimov,

Kulanchikov,

Vergeles

2023

Micromachines

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The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and ELOG methods and had different dislocation densities were studied via the electron-beam-induced current and cathodoluminescence methods. The effects of thermal annealing and electron beam irradiation on dislocation generation and multiplication were investigated. It is shown that the Peierls barrier for dislocation glide in GaN is essentially lower than 1 eV; thus, it is mobile even at room temperature. It is shown that the mobility of a dislocation in the state-of-the-art GaN is not entirely determined by its intrinsic properties. Rather, two mechanisms may work simultaneously: overcoming the Peierls barrier and overcoming localized obstacles. The role of threading dislocations as effective obstacles for basal plane dislocation glide is demonstrated. It is shown that under low-energy electron beam irradiation, the activation energy for the dislocation glide decreases to a few tens of meV. Therefore, under e-beam irradiation, the dislocation movement is mainly controlled by overcoming localized obstacles.

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Section: Introductionmentioning

confidence: 79%

An Experimental Study of Dislocation Dynamics in GaN

Yakimov,

Kulanchikov,

Vergeles

2023

Micromachines

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“…However, even irradiation with the subthreshold energies can affect the electrical and optical properties of many semiconductor materials and structures (see, e.g., references in [96]). Thus, it is known that low energy electron beam irradiation (LEEBI) with beam energy of about 10 keV enhanced partial dislocation glide in 4H-SiC even at liquid nitrogen temperature [97][98][99][100][101][102][103] and dislocation glide in GaN [104][105][106]. As an example of point defect reconstruction under 63 Ni source with the activity of 2.7 mCi.…”

Section: Prediction Of Radiation Damagementioning

confidence: 99%

Prediction of Betavoltaic Battery Parameters

Yakimov

2023

Energies

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The approaches for predicting output parameters of betavoltaic batteries are reviewed. The need to develop a strategy for predicting these parameters with sufficient accuracy for the optimization of betavoltaic cell design without using the simple trial and error approach is discussed. The strengths and weaknesses of previously proposed approaches for the prediction are considered. Possible reasons for the difference between the calculated and measured parameters are analyzed. The depth dependencies of beta particles deposited energy for Si, SiC, GaN, and Ga2O3 and 20% purity 63Ni and titanium tritide as radioisotope sources are simulated using the Monte Carlo algorithm taking into account the full beta energy spectrum, the isotropic angular distribution of emitted electrons and the self-absorption inside the radioisotope source for homogeneously distributed emitting points. The maximum short circuit current densities for the same semiconductors and radioisotope sources are calculated. The methodology allowing the prediction of betavoltaic cell output parameters with accuracy no worse than 30% is described. The results of experimental and theoretical investigations of the temperature dependence of betavoltaic cell output parameters are briefly discussed. The radiation damage by electrons with the subthreshold energy and the need to develop models for its prediction is considered.

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Stacking faults in 4H–SiC epilayers and IGBTs

Wang,

Cheng,

et al. 2024

Materials Science in Semiconductor Processing

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Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Cited by 3 publications

References 40 publications

An Experimental Study of Dislocation Dynamics in GaN

An Experimental Study of Dislocation Dynamics in GaN

Prediction of Betavoltaic Battery Parameters

Stacking faults in 4H–SiC epilayers and IGBTs

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