The influence of an ultrathin interfacial layer of GeO 2 fabricated on Ge(100) substrate by a remote oxygen plasma on the Fermi level (FL) depinning for Al/GeO 2 /n-Ge contact is investigated. Although the GeO 2 interfacial layer has been reported to be able to effectively passivate the interface states for metal-oxide-Ge capacitors, the current-voltage characteristic reveals that it fails to depin the FL for Al/n-Ge contacts. Secondary ion mass spectroscopy and transmission electron microscopy both demonstrate the penetration of Al into GeO 2 layer, which is the key factor leading to the FL depinning failure.