Kinetics of LPE Growth and Its Influence on Magnetic Properties

Blank, S. L.; Hewitt, B.S.; Shick, L. K.; Nielsen, J. W.; Wolfe, Hugh C.; Graham, C. D.; Rhyne, J. J.

doi:10.1063/1.2946901

Cited by 39 publications

(3 citation statements)

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“…where Ln203 refers to the rare earth oxides. These ratios are atomic ratios in contrast to those defined previously (14,15). In clarification, the ratio R.~ -~ PbO/2B203 reads one half the molar ratio of PbO to B203.…”

Section: Eln203mentioning

confidence: 85%

“…Note the smaller scatter and the trend of decreasing moment with decreasing temperature of growth. The latter effect could result from increased lead content (therefore increased Ge 4+ acting as charge compensation) as the growth temperature decreases (15). The growth rate sensitivity of the 4~Ms varies from --173 G/#m/min at 953~ to --430 G/~m/min at 840~ This increased growth rate sensitivity is also thought to be the result of increased lead content.…”

Section: Melt Depletion Effectsmentioning

confidence: 99%

“…tained constant at approximately 100 rpm during the growth period. The details of the apparatus and growth techniques have been discussed elsewhere (14,15). Temperatures at saturation were restricted to 950 ~ _ 25~ except in specific instances mentioned in the text.…”

mentioning

confidence: 99%

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Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions

Blank¹,

Nielsen²,

Biolsi³

1976

J. Electrochem. Soc.

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The relevant phase equilibrium data necessary to grow garnet films containing divalent and tetravalent ions by liquid phase epitaxy are presented. The effects of melt composition on film magnetic properties and film composition are presented as is the influence of growth kinetics on the film magnetic parameters. Work on the false(Y,normalSm,normalCa)3false(normalGe,normalFe)5O12 system is stressed. A coupled distribution coefficient is defined which adequately describes the Ca2+‐Ge4+substitution. The effect of melt depletion on magnetic properties is discussed and data presented to indicate the magnitude of the effect observed in the false(Y,normalSm,normalCa)3false(normalGe,normalFe)5O12 system. An example of the propagation characteristics observed in the false(Y,normalSm,normalCa)3false(normalGe,normalFe)5O12 system is also shown. A technique for controlling the temperature dependence of the collapse field in LPE films is presented. The use of Lu3+ as both a dodecahedral and octahedral substituent is shown to lead to a system flexible enough to meet most of the present device requirements.

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Section: Eln203mentioning

confidence: 85%

Section: Melt Depletion Effectsmentioning

confidence: 99%

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Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions

Blank¹,

Nielsen²,

Biolsi³

1976

J. Electrochem. Soc.

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Properties and Applications of Single‐Crystal Ferrite Films Grown by Liquid‐Phase Epitaxy

Zhang¹,

Yang²,

Wen³

et al. 2022

Modern Ferrites

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Current-Access Magnetic Bubble Circuits

Bobeck¹,

Blank²,

Butherus³

et al. 1979

Bell System Technical Journal

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Experimental and theoretical results from our work on current‐access technology show promise for high‐density, ∼107 bits/cm2, and high‐frequency, f > 1 MHz, bubble devices. We have operated current‐access devices where the bubble‐driving fields derive from two patterned conducting sheets instead of orthogonal field coils. Margins for generation, propagation, and transfer were studied on 8‐μm periods at 1 MHz. These 8‐μm period structures typically required 1.5 mA/μm per conducting sheet and dissipated 14 μW/bit. Single conducting‐sheet, current‐access circuitry also propagates bubbles but offers less design flexibility. We present design criteria, magnetic field equations, and design curves. Implementation of these devices required new magnetic materials with quality factor Q comparable to available garnets, yet higher mobility and lower dynamic coercivity. Of the three systems, (YLuSmCa)3(FeGe)5O12, (LaLuSmCa)3(FeGe)5O12, and (LaLuSm)3(FeGa)5O12, the last appears best suited; some room temperature characteristics of the composition La0.6Lu2.1Sm0.3Ga0.9Fe4.1O12 are 4πMs = 470G, μ = 750 cmS−1‐Oe−1, d = 1.6 μm, and ΔHc = 2 Oe across a bubble for the threshold of motion. Necessary improvements in processing were made with a radio‐frequency, chlorine‐containing plasma etch which produced metal patterns identical to those of the etch mask. We anticipate that current‐access devices, when compared to conventional field‐access devices, will achieve higher data rates, lower power consumption per bit, and greater storage densities with existing processing technologies.

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Kinetics of LPE Growth and Its Influence on Magnetic Properties

Cited by 39 publications

References 0 publications

Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions

Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions

Properties and Applications of Single‐Crystal Ferrite Films Grown by Liquid‐Phase Epitaxy

Current-Access Magnetic Bubble Circuits

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