2007
DOI: 10.1016/j.physb.2006.08.014
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Kinetics of crystallization in amorphous Se73.2Te21.1Sb5.7 under isochronal conditions: Effect of heating rate on the activation energy

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Cited by 39 publications
(18 citation statements)
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“…The JMA model implies that the Avrami exponent n, and the activation energy E, should be constant during the transformation process. Our recent papers in this field have shown that n and E are not necessarily constant but vary during the transformation [1,2,6,7,11,12]. Fig.…”
Section: Resultsmentioning
confidence: 97%
“…The JMA model implies that the Avrami exponent n, and the activation energy E, should be constant during the transformation process. Our recent papers in this field have shown that n and E are not necessarily constant but vary during the transformation [1,2,6,7,11,12]. Fig.…”
Section: Resultsmentioning
confidence: 97%
“…The obtained data of refractive index n can be analyzed to obtain the high frequency dielectric constant ε ∞ via two different methods [7][8][9][10]. To obtain a reliable value of the high frequency dielectric constant ε ∞ , we employed both procedures.…”
Section: Optical Properties Of Cuse Thin Filmsmentioning
confidence: 99%
“…Being the promising materials with potential applications, they can be prepared in a variety of ways [3]. Recently chalcogenide glasses have been investigated as infrared transmitting materials to replace single-crystalline germanium for fabricating infrared optical lenses used in the thermal imaging system due to their advantages over crystals of much lower cost, easier fabrication of complex aspheric IR optical lenses and higher chemical stability [4][5][6][7]. The use of thin films of chalcogenide glasses has attracted much interest in an expanding variety * Corresponding author.…”
Section: Introductionmentioning
confidence: 99%
“…These problems can be removed by adding third element as a chemical modifier in Se-Te binary alloys. A lot of work has been done on ternary chalcogenide glasses having different compositions like Se-Te-Sb, Se-Te-Ge, Se-Te-In [9,10]. In the present work, Zn has been added as a third element in binary Se-Te alloys to study the electrical parameter.…”
Section: Introductionmentioning
confidence: 99%