Kinetics of Charge Carriers across a Graphene-Silicon Schottky Junction

Javadi, Mohammad Sadegh; Noroozi, Aliakbar; Abdi, Yaser

doi:10.1103/physrevapplied.14.064048

Cited by 12 publications

(14 citation statements)

References 48 publications

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“…We note that a large discrepancy can be found in the literature for the Gr-Si SBH (from 0.2 to 0.9 eV 27,[35][36][37][38][39][40][41] ) estimated from electrical transport and that complementary techniques such as to X-ray photoemission spectroscopy lead to much lower barrier height 39 . Furthermore, several experimental studies of the Gr-Si Schottky junction have indicated that an effective Richardson constant, order of magnitude lower than 112 𝑐𝑚 −2 𝐾 −2 , is needed to account for the experimental data 25,26,32,33,42,43 .…”

Section: Resultsmentioning

confidence: 99%

“…43 Furthermore, several experimental studies of the Gr-Si Schottky junction have indicated that an effective Richardson constant, order of magnitude lower than 112 A cm −2 K −2 , is needed to account for the experimental data. 21,23,36,37,46,47 Therefore, to make an estimation of the SBH independent of the effective Richardson constant A* and to avoid relying on a single IV curve, we extracted the SBH and, as byproduct, the effective Richardson constant from the IV characteristics measured at different temperatures (Figure 3a,b). The linear fittings of the forward current were used to extrapolate the current I 0 at V = 0 V, as shown in Figure 4a,b.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Graphene–Silicon Device for Visible and Infrared Photodetection

Pelella

Faella

Luongo³

et al. 2021

ACS Appl. Mater. Interfaces

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The fabrication of a graphene-silicon (Gr-Si) junction involves the formation of a parallel metalinsulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned ntype Si substrate, covered by Si3N4, produces a Gr-Si device in which the parallel MIS consists of a Gr-Si3N4-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 10 4 . The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, 𝜑 𝑏0 = 0.24 𝑒𝑉, the effective Richardson's constant, 𝐴 * = 7 × 10 −10 𝐴𝐾 −2 𝑐𝑚 −2 , and the diode ideality factor. n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction the other for the Gr-Si3N4-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Graphene–Silicon Device for Visible and Infrared Photodetection

Pelella

Faella

Luongo³

et al. 2021

ACS Appl. Mater. Interfaces

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“…11 ) to thermionic emission data from graphene based structures. Recent studies 55 – 57 on graphene based Schottky barrier junction (lightly doped graphene with metal junction) show prospect of applying the equation in which the external voltage induced diode current density is governed by the saturation current density . Also, is thought to be of thermionic origin and according to various authors different forms are given according to Javadi et al 57 in Eq.…”

Section: Resultsmentioning

confidence: 99%

“…( 12 ). where is a constant related to thermionic property of graphene and is shown to be 57 ; is the Schottky barrier height, and is the out of plane electron velocity.…”

Section: Resultsmentioning

confidence: 99%

“…However, none of these authors gave the experimental against T data and for the against graphs temperature was not mentioned by Kalita et al 55 and Sinha and Lee 56 . In addition, Javedi et al 57 however mentioned temperature for their against (external voltage) curves but it is hard to extract the against T data which ideally should be external voltage independent. Thus, more experiments on such diodes are needed to extract against T data on which our model (MRDE) can be conveniently tested, whether it supports or fails.…”

Section: Resultsmentioning

confidence: 99%

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Mathematical models for thermionic emission current density of graphene emitter

Olawole¹,

De²,

Oyedepo³

et al. 2021

Sci Rep

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In this study, five mathematical models were fitted in the absence of space charge with experimental data to find a more appropriate model and predict the emission current density of the graphene-based thermionic energy converter accurately. Modified Richardson Dushman model (MRDE) shows that TEC's electron emission depends on temperature, Fermi energy, work function, and coefficient of thermal expansion. Lowest Least square value of $$S=\sum {\left({J}_{th}-{J}_{exp}\right)}^{2}=0.0002 \,\text{A}^{2}/\text{m}^{4}$$ S = ∑ J th - J exp 2 = 0.0002 A 2 / m 4 makes MRDE most suitable in modelling the emission current density of the graphene-based TEC over the other four tested models. The developed MRDE can be adopted in predicting the current emission density of two-dimensional materials and also future graphene-based TEC response.

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Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection

Feng,

Lau,

Liang

et al. 2023

Adv Funct Materials

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The 2D ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here, the concept of metal/semiconductor (MS) contact into the realm of valleytronics is generalized. A half‐valley Ohmic contact is proposed based on FVSC/graphene heterostructure, where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley‐selectively injected through the ‘Ohmic’ valley while being blocked in the ‘Schottky’ valley. A theory of contact‐limited valley‐contrasting current injection is developed and such transport mechanism can produce gate‐tunable valley‐polarized injection current. Using RuCl2/graphene heterostructure as an example, a device concept of valleytronic barristor is illustrated, where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact‐limited valley‐contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology.

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Kinetics of Charge Carriers across a Graphene-Silicon Schottky Junction

Cited by 12 publications

References 48 publications

Graphene–Silicon Device for Visible and Infrared Photodetection

Graphene–Silicon Device for Visible and Infrared Photodetection

Mathematical models for thermionic emission current density of graphene emitter

Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection

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