Kinetic modulation of graphene growth by fluorine through spatially confined decomposition of metal fluorides

Growth Mechanism of Alternating Defect Domains in Hexagonal WS2 via Inhomogeneous W‐Precursor Accumulation

“…[1][2][3][4][5] Among the various methods for synthesizing TMD monolayers, chemical vapor deposition (CVD) has been widely used for high-quality TMD monolayers over a large area. [6][7][8][9] The optical and electrical properties of CVD-grown While a hexagonal WS 2 monolayer, grown by chemical vapor deposition, exhibits distinctive patterns in photoluminescence mapping, segmented with alternating S-vacancy (SV) and W-vacancy (WV) domains in a single crystal, the formation mechanism for native alternating defect domains remains unresolved to date. Here, the formation mechanism of alternating defect domains in hexagonal WS 2 via the precursor accumulation model is experimentally elucidated.…”

All-carbon hybrids for high-performance electronics, optoelectronics and energy storage

“…Prolonging the growth time, wafer-sized continuous graphene film can be easily synthesized and transferred onto Si substrate, as shown in Figure 3(e). Recently, Liu et al [67] demonstrated that fluorine can accelerate the growth of the graphene even up to a rate of ∼200 µms −1 , as shown in Figures 3(f) and (g). The barrier of methane (CH 4 ) decomposition is greatly reduced through fluorine substitution, and the reaction is switched from endothermic to exothermic.…”

“…Without a doubt, the foundation for any modern electronic technology requires the availability of industrial-scale high-quality material in the first place. Recently, wafer-scale single-crystal graphene has been successfully synthesized by employing a modified fast growth methods [66][67][68]. In 2016, Wang et al [66] presented a fast growth approach for inch-sized graphene on the single-crystalline Cu foils via oxygen chemisorption-induced reconstruction and the maximum growth rate reaches 300 µm•min −1 .…”

Controllable synthesis of graphene by CVD method

“…Cu 2 O层使 成核密度降低了5个数量级以上, 据此获得了毫米级石 墨烯单晶, 并证明了在引入微量氧后, 成核密度主要取 决于退火时间 [30] . 然而, 当氧含量超过一定限度时, [88] 辅助气相沉积, 通过激光、微波、等离子体 等引入CVD体系, 可以促进碳源分子的分解, 使反应温 度降低, 促进生长过程, 实现低温生长 [108] , 或者超快 生长 [109] . [110] .…”