Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

Shin, Byoungchul; Aziz, Michael J.

doi:10.1103/physrevb.76.085431

Cited by 29 publications

(25 citation statements)

References 30 publications

(27 reference statements)

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“…As is shown in Fig. 2, the thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE > MBE > PLD-TH; also, the surface is smoother in PLD-KE than in MBE [31]. In fact, we found no limit to the epitaxial thickness in PLD-KE.…”

Section: Film Growth Mechanisms In Pldsupporting

confidence: 54%

“…1, in semiconductor homoepitaxy for both PLD and MBE the morphology evolution is characterized by increasing surface roughness as growth mounds develop with a well-characterized lateral separation, followed by the evolution of a pyramidal mound morphology, followed by epitaxial breakdown and the formation of an amorphous phase [31]. In Ge homoepitaxy we found that for PLD kinetic energies up to about 300 eV, the morphology in PLD and MBE goes through the same qualitative stages [32].…”

Section: Semiconductor Homoepitaxymentioning

confidence: 99%

“…We used quantitative Reflection High Energy Electron Diffraction intensity oscillations to study the first few monolayers of deposition, delineated the necessary conditions for avoiding interference from Kikuchi features [33], and developed a new diffraction model for the intensity during multi-monolayer deposition [34] that permitted us to determine the height of the EhrlichSchwoebel step-edge attachment barrier which causes the growth instability leading to mounds in the topography [35].…”

Section: Pldmentioning

confidence: 99%

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Film growth mechanisms in pulsed laser deposition

Aziz¹

2008

Appl. Phys. A

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This paper reviews our recent studies of the fundamentals of growth morphology evolution in Pulsed Laser Deposition in two prototypical growth modes: metal-on-insulator island growth and semiconductor homoepitaxy. By comparing morphology evolution for pulsed laser deposition and thermal deposition in the same dual-use chamber under identical thermal, background, and surface preparation conditions, and varying the kinetic energy by varying the laser fluence or using an inert background gas, we have isolated the effect of kinetic energy from that of flux pulsing in determining the differences between morphology evolution in these growth methods.In each growth mode analytical growth models and Kinetic Monte Carlo simulations for thermal deposition, modified to include kinetic energy effects, are successful at explaining much of what we observe experimentally.

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Section: Film Growth Mechanisms In Pldsupporting

confidence: 54%

Section: Semiconductor Homoepitaxymentioning

confidence: 99%

Section: Pldmentioning

confidence: 99%

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Film growth mechanisms in pulsed laser deposition

Aziz¹

2008

Appl. Phys. A

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“…Recent studies performed with Ge have yielded results about the roughness evolution, parameter dependence of the epitaxial breakdown and coarsening of mound-like structures on the surface. [4][5][6] PLD has also been used to grow Ge nanostructures that have potential importance in device fabrication. 7 This work contributes to the understanding of basic, physical mechanisms in thin film growth by PLD by taking into account the crystalline phase, film thickness, as well as substrate material for the growth of Ge as an exemplary material.…”

Section: Introductionmentioning

confidence: 99%

Topography evolution of germanium thin films synthesized by pulsed laser deposition

2017

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Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

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“…The ability to uncouple surface transport processes from substrate heating and enhancing interlayer transport independently makes PLD distinctly different from thermal deposition (TD) processes such as molecular beam epitaxy (MBE) [10]. These nonthermal processes dramatically expand the film growth parameter space compared to TD [2,10] making PLD an important method for exploring energy enhanced film growth physics [11,12].…”

mentioning

confidence: 99%