Kinetic-Energy-Enhanced Neutral Etching

Leone, Stephen R.

doi:10.1143/jjap.34.2073

Cited by 38 publications

(22 citation statements)

References 62 publications

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“…3 Therefore, one solution to these problems is to use neutral particles for etching instead of charged particles. 4 Anisotropic etching by neutral particles requires the production of energetic and directed neutral species. Neutral species have been produced with a supersonic beam and by laser vaporation, and electron stimulated desorption.…”

Section: Kinetic-energy Measurement Of a Neutral Stream Extracted Fromentioning

confidence: 99%

Kinetic-energy measurement of a neutral stream extracted from Ar electron cyclotron resonance plasma

Tsuchizawa

Jin

Matsuo

1996

Applied Physics Letters

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The kinetic energy of a neutral stream within Ar electron cyclotron resonance plasma was evaluated by means of time-of-flight mass spectroscopy. The median energy in the distribution of the neutral stream ranged between 10 and 20 eV for pressure from 1.4 to 2.9×10−4 Torr. This energy is almost equal to that of the ions. The energy of the neutral stream could be controlled by adjusting the gas pressure. A higher pressure broadened the energy distribution of the neutral stream.

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Section: Kinetic-energy Measurement Of a Neutral Stream Extracted Fromentioning

confidence: 99%

Kinetic-energy measurement of a neutral stream extracted from Ar electron cyclotron resonance plasma

Tsuchizawa

Jin

Matsuo

1996

Applied Physics Letters

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“…3) Neutral beam etching is proposed as a candidate process for solving the problems related to the use of charged particles in etching. Various neutral beams, such as a hyperthermal atomic beam, 8,9) a neutral beam produced by ion-neutral scattering, 10,11) and a neutral beam produced by ion-electron recombination, 12) have been studied. In neutral beam etching, the energy and incidence angle of radicals are directly controlled.…”

Section: Introductionmentioning

confidence: 99%

Requirements of Neutral Beam Source Regarding Gas Pressure and Neutral Angle for Nanoscale Etching

Kim

Lee

Yeom

et al. 2004

Jpn. J. Appl. Phys.

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Neutral beam etching is proposed as a candidate process for reducing plasma-process-induced damage (PPID) in nanoscale devices. The requirements of neutral beam properties for high-performance etching are investigated using a two-dimensional particle code. The neutral beam is generated using a plasma-source ion gun and low-angle reflectors. Neutral fluxes from both the neutral beam source and background gases are calculated as functions of gas pressure. The optimal pressure regime which is related to the rate of sidewall etching is suggested. In three-dimensional charge-up simulations, it is observed that the etching rate decreases with decreasing trench size due to the surface charging effect. However, a smaller reduction in the etching rate is observed experimentally in neutral beam etching. The influence of the neutral angle distribution on the etching rate is investigated using a Poisson random variable model. A low directional ratio of the neutral angle results in a low etching rate and a large decrease in etching rate as trench width decreases. Therefore, a pressure of less than 0.5 mTorr and a directional ratio of neutral angle higher than 50% are required for high-performance neutral beam etching.

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“…8 For example, kinetic-energy enhanced activation of neutral species finds important applications in the technologies used for the deposition [10][11][12] and etching of silicon. 13 Translational activation of molecular precursors is not a completely general strategy for materials growth, however, since in many cases thermal decomposition may result from the use of high nozzle temperatures in the beam source.…”

Section: Introductionmentioning

confidence: 99%

Collision-induced activation of the β-hydride elimination reaction of isobutyl iodide dissociatively chemisorbed on Al(111)

Lohokare

Crane

Dubois

et al. 1998

The Journal of Chemical Physics

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The collision-induced activation of the endothermic surface reaction of isobutyl iodide chemisorbed on an Al(111) surface is demonstrated using inert-gas, hyperthermal atomic beams. The collision-induced reaction (CIR) is highly selective towards promoting the β-hydride elimination pathway of the chemisorbed isobutyl fragments. The cross section for the collision-induced reaction was measured over a wide range of energies (14–92 kcal/mol) at normal incidence for Ar, Kr, and Xe atom beams. The CIR cross section exhibits scaling as a function of the normal kinetic energy of the incident atoms. The threshold energy for the β-hydride elimination reaction calculated from the experimental results using a classical energy transfer model is ∼1.1 eV (∼25 kcal/mol). This value is in excellent agreement with that obtained from an analysis of the thermally activated kinetics of the reaction. The measured cross section shows a complex dependence on both the incident energy of the colliding atom and the thermal energy provided by the surface where the two energy modes are interchangeable. The dynamics are explained on the basis of an impulsive, bimolecular collision event where the β-hydride elimination proceeds via a possible tunneling mechanism. The threshold energy calculated in this manner is an upper limit given that it is derived from an analysis which ignores excitations of the internal modes of the chemisorbed alkyl groups.

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Kinetic-Energy-Enhanced Neutral Etching

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Cited by 38 publications

References 62 publications

Kinetic-energy measurement of a neutral stream extracted from Ar electron cyclotron resonance plasma

Kinetic-energy measurement of a neutral stream extracted from Ar electron cyclotron resonance plasma

Requirements of Neutral Beam Source Regarding Gas Pressure and Neutral Angle for Nanoscale Etching

Collision-induced activation of the β-hydride elimination reaction of isobutyl iodide dissociatively chemisorbed on Al(111)

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