Kinetic-energy measurement of a neutral stream extracted from Ar electron cyclotron resonance plasma

Abstract

The kinetic energy of a neutral stream within Ar electron cyclotron resonance plasma was evaluated by means of time-of-flight mass spectroscopy. The median energy in the distribution of the neutral stream ranged between 10 and 20 eV for pressure from 1.4 to 2.9×10−4 Torr. This energy is almost equal to that of the ions. The energy of the neutral stream could be controlled by adjusting the gas pressure. A higher pressure broadened the energy distribution of the neutral stream.

Ar, N2, and Cl2 electron cyclotron resonance plasmas measured by time-of-flight analysis: Neutral kinetic energies and source gas cracking

“…4. 21 We found evidence for such high velocity neutrals at the leading edge of the TOF distributions measured in this study; however, it is clear from mean kinetic energy data presented here that most of the neutrals emanating from the source are much less energetic. The two dominant processes determining the neutral mean kinetic energy are charge exchange between fast ions and the neutral background and the moderation of fast ions and neutrals through elastic collisions with the slower neutral background.…”

“…21 This group observed some fast neutrals with median energies between 10 and 20 eV, which is approximately the energy of the ions emanating from the plasma, suggesting that some fast neutrals are produced directly from ions via a charge exchange process. 21 This group observed some fast neutrals with median energies between 10 and 20 eV, which is approximately the energy of the ions emanating from the plasma, suggesting that some fast neutrals are produced directly from ions via a charge exchange process.…”

Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications

“…The dielectric multilayers were deposited using the electron cyclotron resonance (ECR) sputtering method, [24][25][26][27][28] which had excellent device performance in visible and infrared laser diodes. [21,29] Using an ECR sputtering system (JSW Afty AFTEX-6500), we deposited a film with a thickness of %100 nm on a Si substrate with the dielectric material used for the edge surface of blue and UV laser diodes in previous reports.…”

“…The deposition of dielectric materials was performed under commonly used conditions. [25][26][27][28] Using the deposited refractive index and extinction coefficient information, we designed the structures of the HR and AR dielectric multilayer mirrors using the simulation software "Thin Film View". [33] In this experiment, HR and AR mirrors were designed to be >99% and %8% reflective, respectively.…”