Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment

Rubel, Oleg; Baranovskiǐ, S. D.; Hantke, K.; Kunert, B.; Rühle, W. W.; Thomas, P.; Volz, Kerstin; Stolz, W.

doi:10.1016/j.jlumin.2007.03.009

Cited by 9 publications

(20 citation statements)

References 28 publications

(57 reference statements)

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“…3 is the theoretical fit to experimental data points represented by solid circles ͑b͒. 20,21 As the temperature increases, the carriers in lower lying localized states are thermalised to occupy higher energy localized states and the carriers approach to an equilibrium energy distribution resulting in narrowing of PL line width 20 in the temperature range 100 K Ͻ T Ͻ 150 K at excitation intensity of 4 kW/ cm 2 . ͑1͒ and ͑2͒, indicating the dominance of temperature-induced band gap shrinkage.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent S-shaped photoluminescence in ZnCdO alloy

Mohanta

Thareja

2010

Journal of Applied Physics

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Articles you may be interested inTemperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium Appl. Phys. Lett. 95, 152105 (2009); 10.1063/1.3236771 High pressure photoluminescence of CdZnSe quantum dots: Alloying effectPhotoluminescence ͑PL͒ of ZnCdO alloy with medium Cd concentration ͑50 wt %͒ is studied at different temperatures and at varying excitation intensity. The PL peak position shows red-blue-red ͑S-shaped͒ shift with increase in temperature due to potential fluctuations on alloying. The line width of PL profile shows increasing-decreasing-increasing behavior with increase in temperature. The dependence of S-shape behavior on Cd concentration is analyzed.

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Section: Resultsmentioning

confidence: 99%

Temperature-dependent S-shaped photoluminescence in ZnCdO alloy

Mohanta

Thareja

2010

Journal of Applied Physics

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“…The theoretical approach is based on a kinetic Monte Carlo algorithm. It has been successfully applied to reproduce both time-resolved 12 and time-integrated spectra, 13,14 in particular also for the Ga͑AsBi͒/GaAs material system. 11 Here, this model is based on the assumption that the valence band disorder results in a landscape of localized states.…”

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confidence: 99%

Luminescence dynamics in Ga(AsBi)

Imhof

Wagner

Thränhardt

et al. 2011

Applied Physics Letters

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The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites

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“…At low temperatures below 100 K, carriers hop between the localized states randomly distributed in space and energy resulting in a rapid increase in the FWHM of the PL emission band. 29,30 As temperature increases further, the carriers in lower lying localized states are thermally activated to occupy higher energy localized states and gradually approach to an equilibrium energy distribution, which leads to a decrease of FWHM of PL emission band 29 in the temperature range of 100 K < T < 200 K. At sufficiently high temperatures (beyond 200 K), the FWHM increases again in accordance with the thermal broadening of PL line shape. 31 However, in unalloyed semiconductors with the absence of carrier localization, the FWHM increases monotonically with temperature which can be expressed by the following relation: 32 CðTÞ ¼ Cð0Þ þ aT þ b=½expð hx LO =k B TÞ À 1;…”

Section: Resultsmentioning

confidence: 89%

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Mohanta

Wang

Young

et al. 2015

Journal of Applied Physics

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Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of $12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, s r , extracted from the TRPL profile shows $T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature. V C 2015 AIP Publishing LLC.

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Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment

Cited by 9 publications

References 28 publications

Temperature-dependent S-shaped photoluminescence in ZnCdO alloy

Temperature-dependent S-shaped photoluminescence in ZnCdO alloy

Luminescence dynamics in Ga(AsBi)

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

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