Luminescence dynamics in Ga(AsBi)

Imhof, Sebastian; Wagner, Christian; Thränhardt, A.; Chernikov, A.; Koch, Martin; Köster, N. S.; Chatterjee, Sangam; Koch, S. W.; Rubel, Oleg; Lu, X.; Johnson, Shane; Beaton, Daniel A.; Tiedje, T.

doi:10.1063/1.3580773

Cited by 27 publications

(19 citation statements)

References 19 publications

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“…27,28 Photoluminescence (PL) experiments have shown that in GaAsBi the radiative recombination occurs on a nanosecond time scale (~ 50 -80 ns). 29,30 Since the laser pulse repeats every 12 ns, the radiative recombination process is not probed in our measurements and the observed lifetime corresponds to the faster recombination via defects. The intermediate decay process (A 2 , ) has a negative amplitude and we will discuss the origin of this process in the rest of this paper.…”

Section: A the Three Processesmentioning

confidence: 99%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs 1-x Bi x . We present ultrafast pump-probe reflectivity measurements of this interesting alloy system which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ~ 860 -900 nm has negative amplitude which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ~ 200 ps at 10K.* rajeevkini@iisertvm.ac.in 2

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Section: A the Three Processesmentioning

confidence: 99%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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“…On the other hand, both spatial and valence band tail disorder from Bi incorporation had to be invoked to interpret photoluminescence (PL) experiments. The latter gave a broad low-temperature line width and a non-monotonous temperature dependence of both the PL peak position and the PL line width [27][28][29][30][31] , and had to be explained by two-scale disorder models.…”

Section: Introductionmentioning

confidence: 99%

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

et al. 2016

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Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations (≤ 2%), in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. In particular, we find that at high concentrations the Bi-Bi interactions depend strongly on model periodic cluster configurations, which is not captured by tight-binding models. Averaging over various configurations supports the defect level broadening picture. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

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“…Such a broadening effect is related to the non-uniform distribution of Bi and/or Bi clusters in the GaAsBi layer [27,28]. QW, which becomes strong.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

Pan

Zhang

Zhu

et al. 2016

Semicond. Sci. Technol.

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In0.2Ga0.8As/GaAs1-yBiy/In0.2Ga0.8As (y≥3.4%) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II bandedge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. Blue-shift of type II transitions at high excitation power density was observed and ascribed to the band-bending effect. The calculated transition energies based on 8 band k· p model fit well with the experiment results. The experimental and theoretical results show that the type-II QW design is a new promising candidate for realizing long wavelength GaAsbased light emitting devices near 1.3 μm.2

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Luminescence dynamics in Ga(AsBi)

Cited by 27 publications

References 19 publications

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

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