The reaction of atomic H and EtSiH3 (CH3CH2SiH3) has been studied theoretically by ab initio direct dynamics
methods for the first time. This reaction involves three channels: H abstraction from the silicyl group (SiH3),
H abstraction from the methylene group (CH2), and H abstraction from the methyl group (CH3). At the
QCISD(T)/6-311+G(3df,2p)//MP2/6-311G(2d,p) level, H abstraction from the silicyl group has the smallest
potential barrier (4.58 kcal/mol). The potential barriers of H abstraction from the methylene and methyl groups
are higher by 4−6 kcal/mol than that of H abstraction from the silicyl group. Changes of geometries, generalized
normal-mode vibrational frequencies, and potential energies along the reaction paths for all the channels are
discussed and compared. On the basis of the ab initio data, the rate constants of each channel have been
deduced by canonical variational transition state theory (CVT) with a small-curvature tunneling (SCT) correction
method over a wide temperatures range of 200−3000 K. The theoretical result has been compared with
available experimental data. The kinetics calculations show that the variational effect is small, and in the
low-temperature range (200−500 K), the small curvature tunneling effect is important for all the channels.
The detailed branching ratios have been discussed.