Ka-Band SiGe HBT Power Amplifier for Single-Chip T/R Module Applications

Riemer, P.J.; Humble, J.S.; Prairie, J.F.; Coker, J.D.; Randall, B.A.; Gilbert, Barry K.; Daniel, Erik S.

doi:10.1109/mwsym.2007.380278

Cited by 16 publications

(5 citation statements)

References 16 publications

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“…The increased need for high power microwave components has become essential in modern communication, radars and satellite systems [1]. Power divider is one of the most basic highpower components which are widely used in high power circuits and systems, such as antennas [2][3][4] amplifiers [5,6], six-port circuits [7], push-pull circuits [8].…”

Section: Introductionmentioning

confidence: 99%

Low Loss High Power Air Suspended Stripline Power Divider for High Power Division Sub-Systems Applications

Elshafey¹,

Abdalla²

2018

PIER M

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In this paper, a high power, air suspended stripline (SSL) T junction power divider at L band microwave frequencies is introduced. The power divider operating frequency is centered at 1.3 GHz. In this new configuration, the only dielectric used is air to have maximum power handling capability. An excitation transition from coaxial cable to the SSL transmission line is explained. The SSL was fabricated using aluminum sheets to gain the advantage of low cost. The power divider design was validated using circuit and 3D full wave simulations and confirmed using experimental measurements with all agreements. It has been proved that the power divider attenuation has sharp rejection characteristic at the designed frequency (−20 dB at 1.3 GHz). The power divider can be used as a feeder for devices used in high power applications.

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Section: Introductionmentioning

confidence: 99%

Low Loss High Power Air Suspended Stripline Power Divider for High Power Division Sub-Systems Applications

Elshafey¹,

Abdalla²

2018

PIER M

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“…The power combining property of a phased array means that a single element with 50mW (17dBm) output power can generate the same radiated power with a 4×5 or 4×10 array. Such moderate power level is reachable with SiGe BiCMOS technologies [1][2]. Furthermore, electronic beamsteering eases the pointing of the terminal towards the aimed direction, compared with mechanical adjustment of the reflector.…”

Section: Introductionmentioning

confidence: 99%

A 30/35GHz phased array transmitter front-end with >+14dBm Psat and 10° phase/5-bit amplitude resolution for advanced beamforming

Pei

Chen

Leenaerts

et al. 2014

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

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A 30/35 GHz dual-band phased array transmitter (TX) front-end is demonstrated in a 0.25um SiGe:C BiCMOS process. The front-end provides variable phase shifts from 0°360° with a ~10° resolution. A 5-bit amplitude resolution is achieved for advanced beamforming algorithms. Accurate transmitted beam patterns can be generated by applying a genetic algorithm with the achieved phase and amplitude resolution. The front-end transmits a >+14dBm saturation output power with >+15dB gain and >+22dBm OIP3 at 30/35GHz.

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“…3-dB coupler is another combining technique used in PA designs, including Wilkinson power combiner [11], [12] and quadrature coupler [13], [14]. The combining network design is straight forward since 3-dB coupler adds 3-dB output power directly with given PA units.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Hsiao

Tsai

Liao

et al. 2013

IEEE Trans. Microwave Theory Techn.

105

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In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies.Index Terms-CMOS, high output power, impedance transformation, millimeter-wave, power amplifier, power combining, wideband.

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Ka-Band SiGe HBT Power Amplifier for Single-Chip T/R Module Applications

Cited by 16 publications

References 16 publications

Low Loss High Power Air Suspended Stripline Power Divider for High Power Division Sub-Systems Applications

Low Loss High Power Air Suspended Stripline Power Divider for High Power Division Sub-Systems Applications

A 30/35GHz phased array transmitter front-end with >+14dBm Psat and 10° phase/5-bit amplitude resolution for advanced beamforming

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

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Ka-Band SiGe HBT Power Amplifier for Single-Chip T/R Module Applications

Cited by 16 publications

References 16 publications

Low Loss High Power Air Suspended Stripline Power Divider for High Power Division Sub-Systems Applications

Low Loss High Power Air Suspended Stripline Power Divider for High Power Division Sub-Systems Applications

A 30/35GHz phased array transmitter front-end with &#x003E;+14dBm Psat and 10&#x00B0; phase/5-bit amplitude resolution for advanced beamforming

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

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Product

Resources

About

A 30/35GHz phased array transmitter front-end with >+14dBm Psat and 10° phase/5-bit amplitude resolution for advanced beamforming