Ka-band full-360° analog phase shifter with low insertion loss

Cao, Mengmeng; Lu, Yang; Wei, Jia-Xing; Zheng, Jiaxin; Ma, Xiaohua

doi:10.1088/1674-4926/35/10/105005

Cited by 4 publications

References 8 publications

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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

et al. 2016

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A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of −6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of −0.5 and −5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit.

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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

et al. 2016

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A novel Ka-band GaN phase shifter for SATCOM phased-array antennas

Mener

Gillard

Roy

2016

2016 17th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM)

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International audienceA Ka-band phase shifter is a key component of phased array antennas for SatCom applications. By using GaN technology, large power handling capability and high frequency operation can be achieved. In this paper, a HEMT GaN switch using a metal gate of 0.15μm is designed at 30 GHz for signal levels up to 37 dBm. From this efficient GaN switch, a compact and innovative monolithic phase-shifter is proposed for Ka-band operation with a 2-bit phase resolution and attractive insertion loss, isolation and bandwidth performance

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