K-band MMIC active band-pass filters

Fan, Kang-Wei; Weng, Ching-Chih; Tsai, Zou-Min; Wang, Huei; Jeng, Shyh‐Kang

doi:10.1109/lmwc.2004.840961

Cited by 25 publications

(2 citation statements)

References 10 publications

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“…One possible remedy is the adoption of active Q-enhancement of passive resonators on-chip [7][8][9][10][11], at the expense of potentially higher NF and finite dynamic range. A secondary goal would be to minimize the size of the distributed components (thereby saving on chip area) by opting for pseudo-combline resonators [12] as opposed to full quarter-wave (λ g /4) or half-wave (λ g /2) resonators.…”

Section: Introductionmentioning

confidence: 99%

“…Negative resistance based Q-enhancement on-chip has been applied in GaAs at 65 GHz using λ g /4 coplanar waveguide (CPW) resonators [7], as well as at 22.6 GHz [8] with lumped resonators. Both enhancement circuits feature inductive input reactance due to inductive feedback, where capacitive reactance is required for the synthesis of combline filters [12].…”

Section: Introductionmentioning

confidence: 99%

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E-Band Active Q-Enhanced Pseudo-combline Resonator in 130 nm SiGe BiCMOS

Singh

Stander

2018

J Infrared Milli Terahz Waves

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We present an active Q-enhanced pseudo-combline resonator integrated in 130nm SiGe BiCMOS. It is shown that the resonator Q 0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.

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