K-band capacitive MEMS-switches

Ulm, Markus; Walter, Thomas; Mueller-Fiedler, Roland; Voigtlaender, K.; Kasper, E.

doi:10.1109/smic.2000.844313

Cited by 10 publications

(6 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For MEMS beams working in the microwave region, typical values for R s are 0.1–0.2 Ω, and the inductance L is in the order of pH. The theoretical value for the inductance L is [ 17 ]

where s is the distance between the edge of the signal line and the anchor of the beam.…”

Section: Design Analysis and Fabricationmentioning

confidence: 99%

Design and Analysis of a Hybrid-Type RF MEMS Phase Detector in X-Band

Han

Ding

2022

Micromachines

View full text Add to dashboard Cite

In this paper, we have designed, analyzed, and characterized a hybrid-type MEMS device for X-band phase shift measurement. The signal related to a phase shift of the inputs is fractionally in-line coupled by a MEMS beam and delivered to a thermoelectric power sensor, where the phase is ultimately converted into DC voltage output. With the hybrid of the MEMS beam and the thermoelectric power sensor, both in-line detection process and phase-DC voltage conversion is reserved, which is a benefit for large power capacity, good linearity property, and high-level integration density. In order to get a deep insight into the physical mechanisms involved in the phase detection process, a comprehensive analysis model is presented. The beam is modeled as a precise RLC circuit component, where the capacitance is related to the input power. The fabrication is compatible with GaAs monolithic microwave integrated circuit (MMIC) technology. Experimental results show that return loss is smaller than −11.3 dB and isolation is better than −9.3 dB over X-band. Phase shift detection from 0 to 180 degrees is verified for a large power range of 200–1600 mW (23–32 dBm). The perfect linearity property of the phase-detection sensitivity is demonstrated in the same power range. Low intermodulation distortion is also confirmed through measurement. It is revealed from the comparison between this work and other published results in the literature that this presented hybrid-type structure shows superiorities in both power handling ability and phase-detection linearity. It can be adopted in medium power signal applications with a high level of integration.

show abstract

“…For MEMS beams working in the microwave region, typical values for R s are 0.1–0.2 Ω, and the inductance L is in the order of pH. The theoretical value for the inductance L is [ 17 ]

where s is the distance between the edge of the signal line and the anchor of the beam.…”

Section: Design Analysis and Fabricationmentioning

confidence: 99%

Design and Analysis of a Hybrid-Type RF MEMS Phase Detector in X-Band

Han

Ding

2022

Micromachines

View full text Add to dashboard Cite

show abstract

“…ε 0 and ε r are the permittivity of free space and the permittivity of the insulation layer, respectively. The inductance L and the resistance R s of the MEMS membrane can be expressed as [12]- [14] L = 2s ln…”

Section: A Basic Operationmentioning

confidence: 99%

“…The 2-D temperature distributions can finally be obtained by solving (11) with the boundary conditions in (12).…”

Section: B Thermal Analysismentioning

confidence: 99%

A Micromachined Inline-Type Wideband Microwave Power Sensor Based on GaAs MMIC Technology

Han¹,

Huang²,

Liao³

et al. 2009

J. Microelectromech. Syst.

View full text Add to dashboard Cite

Wideband 8-12-GHz inline-type microwave power sensors that are based on measuring the microwave power coupled from the coplanar waveguide line by a microelectromechanical systems membrane are presented. In this method, the signal is available during the power detection. In order to obtain the low reflection losses and insertion losses, as well as the wideband response of the power sensor, an impedance match structure and a compensating capacitance are proposed. The fabrication of the power sensor is compatible with the GaAs monolithic microwave integrated circuit (MMIC) process. The experimental results show that the sensor has reflection losses better than 20 dB and insertion losses less than 0.45 dB up to 12 GHz. A sensitivity of more than 30 µV/mW and a resolution of 0.2 mW are obtained at the 10-GHz frequency.[ 2008-0219]Index Terms-GaAs, micromachining, microwave power sensor, monolithic microwave integrated circuits (MMICs).

show abstract

“…where λ 7 and λ 10 are the thermal conductivities of zones 7 and 10; L 1 , L 7 and L 10 are the lengths of zone 1, 7 and 10, respectively; y 1 is a point along the y-axis. The 2D temperature distributions can be obtained finally by solving equation (11) with the boundary conditions (12). The thermopile near the matched resistance detects the resultant temperature increase of the load and converts the temperature difference to electric signal to realize the microwave power measurement.…”

Section: Principle Of Operationmentioning

confidence: 99%

A microwave power sensor based on GaAs MMIC technology

Han

Huang

Liao

2007

J. Micromech. Microeng.

View full text Add to dashboard Cite

A novel structure for measuring the power of microwave signals is presented. It measures the microwave power coupled from the CPW line by a MEMS membrane. In this method, the signal is available during the power detection. The fabrication of the power sensor is compatible with the GaAs MMIC process. The design, fabrication and experimental results of this sensor are given. The experimental results show that the sensor has a reflection of less than −15 dB and insertion loss of less than 2.0 dB up to 12 GHz. The total sensitivity of such a power sensor is 10.4 µV mW−1 at 10 GHz frequency.

show abstract

K-band capacitive MEMS-switches

Cited by 10 publications

References 3 publications

Design and Analysis of a Hybrid-Type RF MEMS Phase Detector in X-Band

Design and Analysis of a Hybrid-Type RF MEMS Phase Detector in X-Band

A Micromachined Inline-Type Wideband Microwave Power Sensor Based on GaAs MMIC Technology

A microwave power sensor based on GaAs MMIC technology

Contact Info

Product

Resources

About