GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084)
DOI: 10.1109/gaas.2000.906326
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K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC

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Cited by 6 publications
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“…GaN HEMT [63] GaN HEMT [62] GaAs FET [57] GaN HEMT GaN HEMT GaAs HBT [58] GaAs HFET [56] GaAs PHEMT [54] GaAs PHEMT [53] InP HBT [65] InP HBT [60] InP HBT [65] InP HBT [64] …”
Section: Unmatched Gan Hemt Devicesmentioning
confidence: 99%