K=0.266 immersion lithography patterning and its challenge for NAND FLASH

Hu, Huayong; He, Weiping; Li, Gaorong; Zhang, Nannan; Yue, Liwan; Ye, Lei; Pei, Jinhua; Wu, Qiang

doi:10.1109/cstic.2015.7153360

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…Patterning utilizing single exposure immersion lithography has reached a production resolution limit of 80 nm pitch and therefore does not meet the lithographic requirements to print 5 nm node feature critical dimensions (CDs) without the use of self-aligned or other alternative techniques. [1] However, even with aggressive immersion multiple/self-aligned patterning solutions, additional cut masks and multi-color contact/vias masks, achieving the required 5 nm technology specification will be difficult. Substantial process complexity can be alleviated with the introduction of EUV lithography if the technology is ready for use in high-volume manufacturing, assuming the necessary reliability, throughput and patterning performance have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

EUV and optical lithographic pattern shift at the 5nm node

Hosler

Thiruvengadam

Cantone

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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At the 5 nm technology node there are competing strategies for patterning: high-NA EUV, double patterning 0.33 NA EUV and a combination of optical self-aligned solutions with EUV. This paper investigates the impact of pattern shift based on the selected patterning strategy. A logic standard cell connection between TS and M0 is simulated to determine the impact of lithographic pattern shift on the overlay budget. At 5 nm node dimensions, high-NA EUV is necessary to expose the most critical layers with a single lithography exposure. The impact of high-NA EUV lithography is illustrated by comparing the pattern shift resulting from 0.33 NA vs. 0.5x NA. For the example 5 nm transistor, cost-beneficial lithography layers are patterned with EUV and the other layers are patterned optically. Both EUV and optical lithography simulations are performed to determine the maximum net pattern shift. Here, lithographic pattern shift is quantified in terms of through-focus error as well as pattern-placement error. The overlay error associated with a hybrid optical/selfaligned and EUV cut patterning scheme is compared with the results of an all EUV solution, providing an assessment of two potential patterning solutions and their impact the overall overlay budget.

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Section: Introductionmentioning

confidence: 99%