Junction temperature estimation of IGBT module via a bond wires lift‐off independent parameter V _gE‐np

Abstract

An electrical method for junction temperature estimation of insulated-gate bipolar transistors (IGBTs) is presented in this study. Owing to the parasitic inductance between bond wire and main emitter terminal L E. The temperature-dependent falling collector current during turn-off transition would cause a negative voltage drop in the gate-main emitter voltage waveform v gE. Therefore, this negative voltage drop V gE-np is proportional to the junction temperature. A double-pulse test circuit is developed to verify the accuracy and feasibility of the proposed method. The impacts of collector-emitter voltage V ce , collector current I c and bond-wires cutoff are also be discussed theoretically and experimentally. The experimental results show that the proposed V gE-np has a linear relationship with junction temperature as theoretical analysis and it is a bond-wires cutoff independent parameter in some special test point, which offers an effective way to estimate junction temperature without package destruction. The advantages of the proposed method include good linearity, bond-wires failure immunity and adequate sensitivity with junction temperature.

Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules

“…During the test, it is assumed that the bond wire failure is the main reason to introduce a resistance increase of the IGBT modules and the effect of metallization degradation is ignored since it usually takes more aging time. The bond-wire lift-off is simulated by cutting bond wires of the IGBT module also as suggested in [4], [23][24][25][26]. However, it is very difficult to exclude the other failures/degradation in an IGBT module, which can lead to an obvious thermal resistance increase, since it is sometimes very sensitive to different thermal interface materials.…”

Optimised temperature fluctuation control strategy for lifetime improvement in aircraft electrical power distribution system

“…The rainflow counting algorithm can be used to extract the junction temperature sequence, and the lifetime of the power device is calculated according to the linear fatigue accumulation method [19,20]. In addition, the temperature fluctuations of the power devices are closely related to the driving signals and the driving signals can be optimised to improve the lifetime of the power devices [21][22][23]. This paper proposed a new control strategy, which is based on the temperature feedback.…”

An On-Line Calibration Method for TSEP-Based Junction Temperature Estimation

“…One of the primary ways is to estimate the T j indirectly by measuring TSEPs, such as the on-state voltage [3][4][5], change rate of collector-emitter voltage [6], base-collector voltage drop [7], switching time [8,9], gate peak current [10,11], pre/threshold voltage [12], miller plateau in gate voltage [13], and Kelvin power emitter voltage [14,15], etc. If the relationship between T j and TSEPs is calibrated in advance as shown in Fig.…”