Junction characteristics of chemically-derived graphene/p-Si heterojunction solar cell

Behura, Sanjay K.; Nayak, Sasmita; Mukhopadhyay, Indrajit; Jani, Omkar

doi:10.1016/j.carbon.2013.10.069

Cited by 59 publications

(44 citation statements)

References 35 publications

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“…[15,21] Putting graphene over semiconductor naturally forms van der Waals Schottky diode, [21][22][23][24] which can be used as solar cells. [25][26][27][28][29] Distinct from traditional Schottky diode, the barrier height of graphene/semiconductor Schottky diode is tunable as the Fermi level of graphene and semiconductor can be adjusted independently benefiting from the nature of van der Waals contact, the low density of energy states near Dirac point and small screening length of graphene. [30,31] Although the tunable barrier height is the key to the physical picture of graphene/semiconductor Schottky diode, and structures with thin metal, ferroelectric polymer and ionic liquid as gating layer have been employed in graphene based electronic and optoelectronic devices [32][33][34][35][36][37][38][39][40], its applications in solar cell has not been explored systemically and the performance needs to further improved.…”

Section: Introductionmentioning

confidence: 99%

18.5% efficient graphene/GaAs van der Waals heterostructure solar cell

Li¹,

Chen²,

Zhang³

et al. 2015

Nano Energy

191

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Lin, 18.5% Efficient graphene/GaAs van der Waals heterostructure solar cell, Nano Energy, http://dx.Abstract: High efficient solar cell is highly demanded for sustainable development of human society, leading to the cutting-edge research on various types of solar cells. The physical picture of graphene/semiconductor van der Waals Schottky diode is unique as Fermi level of graphene can be tuned by gate structure relatively independent of semiconductor substrate. However, the reported gated graphene/semiconductor heterostructure has power conversion efficiency (PCE) normally less than 10%. Herein, utilizing a designed graphene-dielectric-graphene gating structure for graphene/GaAs heterojunction, we have achieved solar cell with PCE of 18.5% and open circuit voltage of 0.96 V. Drift-diffusion simulation results agree well with the experimental data and predict this device structure can work with a PCE above 23.8%. This research opens a door of high efficient solar cell utilizing the graphene/semiconductor heterostructure.

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Section: Introductionmentioning

confidence: 99%

18.5% efficient graphene/GaAs van der Waals heterostructure solar cell

Li¹,

Chen²,

Zhang³

et al. 2015

Nano Energy

191

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“…The detailed structural, optical and electrical characterizations are described in our previous report. 8 The schematic for Si solar cell with Ag grids as CSE and graphene as TCSE is shown in Fig. 2(a).…”

Section: Resultsmentioning

confidence: 99%

“…The detailed fabrication process has been explained in our previous report. 8 Atomic force microscopy (AFM) (NANOTEC Electronica, Spain) and Raman spectroscopy (Invia Reflex/514, Incoterm, UK), were employed for sample characterization. TCAD Silvaco software (Version: Atlas 5.16.3.R), which uses the models such as, AUGER for Auger recombination, SRH for Shockley Read Hall recombination, OPTR for optical recombination, K.P.…”

Section: Experimental and Theoretical Approachmentioning

confidence: 99%

“…[2][3][4] The advantages of TCSEs over Ag grid are it is transparent and at the same time it can conduct electricity. To that end, the recently discovered material graphene, 5 which is one carbon atom thick and shown potential evidence in solar cells, [6][7][8] field electron emission 9 and photo-detectors 10 will be suitable for TCSE applications. Due to the linear energy-momentum relationship at the K and K' points of the Brillouin zone, electrons in graphene sheet behave like mass less Dirac-Fermions.…”

Section: Introductionmentioning

confidence: 99%

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Graphene as transparent and current spreading electrode in silicon solar cell

et al. 2014

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Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

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“…Several previous studies have been reported in term of graphene for optoelectronic applications, include solar cell [1][2][3][4]. Most of them still reach relatively low power conversion efficiency (<5% PEC) as a consequence many efforts continuouslly carried out in order to get a better achievement either experimentally or simulation studies.…”

Section: Introductionmentioning

confidence: 99%