Junction between amorphous germanium and monocrystal npSi

Sinha, Neeraj; Misra, M.

doi:10.1016/0038-1101(83)90146-6

Cited by 6 publications

(2 citation statements)

References 16 publications

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“…This is in agreement with the theoretical value obtained from the resistivity of Si substrates, indicating that the a-SiC/c-Si(n) isotype heterojunction is a one sided junction, whose depletion region is mainly extended within the c-Si(n) substrate. From the same plot of figure 5, AEv (Eg2-Egl) AEc (6) aEc X,-X2 …”

Section: Introductionmentioning

confidence: 84%

“…On the other hand, very little work has been done on the a-SiC/c-Si heterojunction 6.17, although a-SiC exhibits a series of important properties (e.g. wide optical band gap, photoluminescence, electroluminescence, mechanical strength), and c-Si is the most well known semiconductor material, so that the aSiC/c-Si heterojunction could be very useful in many semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

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A Study of a‐Sic/C‐Si(n) Isotype Heterojunctions

Georgoulas¹,

Magafas²,

Thanailakis³

1993

Active and Passive Electronic Components

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In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X 4.20 --. -0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared detectors.

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Section: Introductionmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%