1987
DOI: 10.1016/0038-1101(87)90193-6
|View full text |Cite
|
Sign up to set email alerts
|

Amorphous-crystalline silicon anisotype heterojunctions: Built-in potential, its distribution and depletion widths

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1989
1989
2011
2011

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 22 publications
0
1
0
Order By: Relevance
“…An important parameter of heterojunctions is the relative distribution of the hetero-bandoffset between valence-and conduction-band. While most authors hypothized a mayor contribution of the band-offset in the valence-band [9,13], also the contrary has been proposed, based on internal photoemission measurements [14]. These authors propose the band-structure of the a-Si/c-Si heterojunction with the mayor contribution of the heterobndoffset in the conduction band, as depicted in Fig.4.…”
Section: History Of the A-si/c-si Solar Cellmentioning
confidence: 99%
“…An important parameter of heterojunctions is the relative distribution of the hetero-bandoffset between valence-and conduction-band. While most authors hypothized a mayor contribution of the band-offset in the valence-band [9,13], also the contrary has been proposed, based on internal photoemission measurements [14]. These authors propose the band-structure of the a-Si/c-Si heterojunction with the mayor contribution of the heterobndoffset in the conduction band, as depicted in Fig.4.…”
Section: History Of the A-si/c-si Solar Cellmentioning
confidence: 99%